absorption band造句

• The first ytterbium - doped yttrium - aluminum garnet ( yb : yag ) laser action was reported back in 1965 using a lamp - pumped rod at 77 k . because of poor spectral overlap of the lamp with the the trivalent ytterbium ion ( yb3 + ) absorption band , the efficiency was very low . lamp - pumped nd : yag lasers fared better due to the multiple pump bands of neodymium
  但yb3 +离子的泵浦吸收带与闪光灯光谱匹配很差,导致其激光效率很低;而nd : yag的激活离子( nd3 + )有多个泵浦带与闪光灯光谱匹配,较好适应了灯泵浦的需要,长期占据了固体激光器的主导地位。
• The single layer films are physically mixed and prepared by polychloroprene and ferrite 94rc . one is synthesized in a lump , the maximal value of its inverse absorption is 12 . 88db but the obverse is 8 . 54db at 6 . 79ghz ; the absorption band of its inverse is wider than another side . the other films are made by quartic equal steps , the absorption of its obverse and inverse have not too much differences , the peak value is 10db at 14 . 4ghz
  吸波性能测试表明一次注模所制薄膜其反面在8 . 88ghz时有最大衰减12 . 88db ,而正面在6 . 79ghz时有最大衰减8 . 54db ,反面的吸波频带也比正面宽;而四次注模所制薄膜其吸波性能在正反两面的吸收频带和强度基本一致,在14 . 4ghz时达到10db左右。
• Particularly , cr4 + - doped crystals as passive q - switch ( saturable absorber ) have got extensive attention , such as cr4 + : yag ， cr4 + : gsgg ， cr4 + : mg2sio4 and cr4 + : yso , which have the advantages of wild absorption band , good saturable absorption , long restored time , good photo - chemical stability , no fading , good thermal conductivity and high damage threshold
  特别是近年来，掺cr4 +离子的各种晶体如cr4 + : yag ， cr4 + : gsgg ， cr4 + : mg2sio4和cr4 + : yso等作为被动调q开关受到了广泛的关注。它们具有很宽的吸收带和良好的饱和吸收性质，恢复时间较长，光化学性质稳定，无退化现象，热导性好，损伤阈值高。
• The method plays an important role in distinguishing and studying the complicated and confused spectral characteristics and mechanisms of the rare earth . ( 2 ) it is found and explained that due to the boltzmann distribution law at room temperature , the positions of the fine peaks of the photoluminescence band stemming from the transitions between an excited state and the ground state of a re3 + , match these of the absorption bands from the transitions between the ground state and the excited state . the stark split energy levels of the ground state 4i15 / 2 and two excited states 2s3 / 2 and 4f9 / 2 of the er3 + in er203 have been determined
  薛理辉武汉理工大学博士学位论文摘要( 2 )发现在常温下，由于boltzm ~分布律的作用，在re3 +的基态电子态和激发态间跃迁所产生的发光谱带和吸收谱带中的精细谱峰的位置一一相同，解释了产生这种关系的原因，并弄清了er203中er3 +的基态电子态4lts . 12和激发态电子态2凡/ 2 、 4凡/ 2的stark能级分裂情况，确定了常温下erzo3中er3 +的4了15 / 2一2凡/ 2和‘ i ， 5 / 2一‘凡/ 2精细能级间的跃迁形式。
• Measurements show that the optical properties of the co / aao composites depend on the length and the diameters of co nano - wires . as the co composition increased , the absorption band - edge is strongly red - shifted ( 115 nm ) and the even reflectance of the composite change from 70 % to 6 % . meanwhile the reflectance is more sensitive to the change of the diameter of co nano - wire
  随体系中co沉积量的增加， co aao复合结构的吸收边将发生较大幅度的红移(观察到的频移量约为80nm ) ，而光反射率随之降低(调制幅度可从70至6 ) ，且反射特性更加敏感于co纳米线直径的变化； 4
• The band was previously associated with f - type color centers and v - type color centers , as analyzed in x - ray irradiated ysz sample . however , the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra . this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers
  本文通过光吸收、光荧光、 tem 、 xps测试及trim96计算分别研究了不同注量xe ~ +注入ysz前后光学性能和缺陷形态变化，以及ni ~ +注入对不同掺杂单晶al _ 2o _ 3结构和光学性能的影响，得到以下结果： ( 1 ) ysz注量达到10 ~ ( 16 ) cm ~ ( - 2 )时，开始出现由f型和v型色心重叠而产生的吸收带，与x射线、中子辐照相比，重离子辐照产生了更为复杂的缺陷复合体而导致吸收峰红移。
• The results show that the differences between the two composites are very large . although the micrograph of the ni nano - wire and the co nano - wire are nearly the same , as the metal composition increased , the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ) , however , the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ) . meanwhile , the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively
  或no组份比的增加， ni / aao吸收边的红移量仅约13nln ，而co / aao的吸收边红移量却超过了80lun ，分析发现ni / aao复合体系具有间接带隙半导体的光学特征，而co从ao复合结构则具有直接带隙半导体的光学特征; 5 .实验研究了a创aao纳米有序阵列复合结构的光吸收特性，在其光吸收谱上出现了较强的ag表面等离子体振荡吸收峰，随ag沉积量的减少，吸收峰位发生红移，且逐渐展宽