ohmic造句

• The primary investigation of this paper is the ohmic contact between metafs ' and gan . moreover , we have prepared photodetectors and schottky diodes based on gan
  本文的主要工作是对金属与n型gan的欧姆接触进行了研究，并在此基础上制备了硅基gan上的紫外探测器和gan肖特基二极管。
• The mechanism and distinguishing features of the ohmic heating technology were introduced and the research progress and the existing problems about its application in the food processing industry were described
  摘要阐述了欧姆加热技术的原理、特点及应用于食品加工中的研究进展。
• At the same time , the rapid progress on devices requires better ohmic contact between metals and gan , for example , the short - wave ld requires specific contact resistivity lower than 10 - 4 cm2
  Gan材料与金属欧姆接触的性能对器件有着重要的影响。低阻欧姆接触是gan基光电子器件所必需的。
• This dissertation mainly introduces the system design and implementation of the measuring instruments of internal battery ohmic , and elaborates on the structure , the operational principle and the performance of system
  文章主要介绍了内阻检测仪的系统设计及实现,详尽的介绍了系统的结构、工作原理及性能。
• Mechanism of various ohmic and non - ohmic flux losses is reviewed . an equivalent circuit code is realized , where the 3 - d effect of helical coil and the distribution of armature ' s mirror current is considered
  然后总结了各种ohmic磁通损失和非ohmic磁通损失机制，指出了它们各自的严重性和可能的解决办法。
• The main work includes three contents as followings : 1 , the situation of ohmic contact about al electrode , ti / al electrode on n - gan in different annealing conditions are investigated
  主要工作如下： 1 、研究了al单层及ti al双层电极与n型gan在不同退火条件下的欧姆接触情况，并用挖补圆盘法计算出接触电阻率。
• In this thesis , the basic characteristics of algan / gan heterojuntion have been analyzed . then fabrication of algan / gan hemt and current collapse are investigated . ti / al / ni / au ohmic contact to low doping gan film is studied
  本文以所制得hemt样品为研究对象,在分析其异质结特性的基础上,对电流崩塌效应机理作了探索性研究。
• Ni ohmic contacts fabricated by traditional evaporation and thermal annealing on temperature of about 1000 have lower contacts resistances . the testing result on 400 does n ' t show it can keep thermal stability
  按常规方法镀镍( ni )并经1000左右高温退火得到的欧姆接触具有更低的室温比接触电阻，但400高温欧姆特性测试表明其热稳定性不够好。
• For the purposes to make cd1 - xznxte detector , ohmic contact materials of cd1 - xznxte crystal are selected and structure of electrode is designed . the processing of conducting film prepared by the magnetron sputtering is studied
  本研究主要开展了在cdznte晶体上欧姆接触电极的设计选材和磁控溅射方法制备导电薄膜的工艺研究，为cdznte探测器的制备奠定工艺技术基础。
• In recent decade , internal battery ohmic measurement has become a heated topic of cell users and cell manufactures and it also becomes a hot research topic to measure and predict the performance of cell by inner resistance test
  近年来电池内阻的检测一直是电池用户和电池厂商之间一个比较热门的话题,通过快速检测电池内阻来识别和预测电池的性能成了目前研究领域的热点问题。
• The common adopted ways such as dc internal battery ohmic measurement , ac voltage drop internal battery ohmic measurement and inductance measurement don ’ t have a standard model and have obvious disadvantages and limited test range
  就是现在行业内普遍采用的直流放电内阻测量法、交流压降内阻测量法及电导技术测量法,都没有一个统一的标准模型,差异性大,测试的范围和评估准确性相对有限。
• Due to its advantages of high power capacity , weak dispersion , easier fabrication and low ohmic losses , the folded rectangular groove guide would be an excellent slow - wave structure in millimeter and submillimeter wave twts
  曲折矩形槽波导结合了曲折波导散热能力强、色散特性好、容易加工和矩形槽波导单模工作、低损耗、大尺寸等优点，因此这种新型的慢波系统有可能在毫米波及亚毫米波段的行波管中具有较好的发展前景。
• In the study , it is further shown that the current follows michaelis - menten kinetics in steady state . using the kcsa k + permeation parameters provided by p . h . nelson [ 1 ] , the current - voltage relationship is proved to be ohmic and the concentration - current relationship are also obtained reasonably
  由此，在平衡状态下推出了能斯特( nernst )方程；在稳态条件下，转导电流满足米氏动力学关系( michaelis - mentenkinetics ) 。
• One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface , and the main technology usually used is evaporation , but the cohesion of evaporated film is n ' t very firm
  制备cdznte探测器最关键的技术之一就是在cdznte表面制备出欧姆接触薄膜电极。关于在cd _ ( 1 - x ) zn _ xte晶体表面制备接触电极用导电薄膜，大都是采用蒸发镀膜技术，膜层与cdznte晶体结合不很牢固。
• The procedure to modify the sss code is as follow : at first the hom eos ( equation of state ) is replaced by the sesame eos , secondly the magnetic force is added to the momentum equation , the ohmic heating rate is added to the energy conservation equation
  对sss程序改造过程大致如下：首先以sesame数据库物态方程替换sss程序原有的物态方程；其次在动量守恒方程中加上洛仑兹力项，在能量守恒方程中加上单位质量焦耳加热项，通过麦克斯韦方程推导出磁扩散方程。
• A mathematical model for the anode of a direct methanol fuel cell ( dmfc ) considering the mass transport in the whole anode compartment and the proton exchange membrane ( pem ) , together with the kinetic and ohmic resistance effects through the catalyst layer is developed . the influences of key parameters on methanol crossover and anode performance are investigated
  对于dmfc的阳极，本文描述了甲醇和水在阳极及质子交换膜（ pem ）中的传递过程、反应动力学和欧姆阻抗效应，建立阳极和pem的数学模型，并探讨对甲醇扩散和阳极性能影响的主要因素。
• The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm . the low theshold current 2 . 9a the output power 20w at 17 . 5a have been achieved by sioi isolation , ohmic contact and facet coating processes . the central wavelength is 979nm . at the same time , model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research
  激光器的生长结构采用ingaas / gaas / algaas分别限制应变单量阱线性缓变折射率波导结构，列阵条宽为4mm ，通过sio _ 2掩膜，欧姆接触和腔面镀膜等工艺，实现了阈值电流为2 . 9a ，驱动电流为17 . 5a时输出功率为20w 。
• In this paper , we first presented a comprehensive review of the research history and current status of gan material preparation and characterizations . on the basis of that , we conducted a detailed study of ohmic contact resistivity of metal - gan , and algan - based schottky barrier diode was successfully achieved . in addition , we reported polycrystalline gan epitaxied on silica glass substrates
  本论文在系统总结了国内外gan材料制备和器件应用的研究历史和现状的基础上，对金属与n型gan的欧姆接触进行了较细致的研究，计算出接触电阻率，并在此基础上制备了algan基肖特基二极管原型器件，向gan及其合金的微电子器件研究迈出了重要一步。
• The main work in this thesis includes two contents as follow : 1 we have investigated the properties of ohmic contact between metal electrode ( al and ti / al electrode ) and n - gan dealed under different annealing conditions . by using xrd sims analytic methods and i - v measuremnet , we analysed the interface between metals and gan , and suggested that it is effect to decrease the value of the ohmic contact
  主要工作如下： 1 、研究了al单层及ti al双层电极与n型si基gan和al _ 2o _ 3基gan在不同退火条件下的欧姆接触情况，并用x射线衍射谱( xrd ) ，二次离子质谱( sims )对界面固相反应进行了分析。
• Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work . in addition , we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic
  本文讨论了n型6h - sic欧姆接触的制备工艺及其基本电学及热学特性，并在此基础上采用金属au及ni在n型6h - sic硅面( 0001晶向)上制备了具有一定特性的肖特基势垒二极管。