field - effect transistors造句
例句与造句
- semiconductor devices-discrete devices . part 8 : field-effect transistors . section one-blank detail specification for single-gate field-effect transistors up to 5w and 1ghz
半导体器件分立器件第8部分:场效应晶体管第一篇1ghz5w以下的单栅场效应晶体管空白详细规范 - semiconductor devices-discrete devices . part 8 : field-effect transistors . section one-blank detail specification for single-gate field-effect transistors up to 5w and 1ghz
半导体器件分立器件第8部分:场效应晶体管第一篇1ghz5w以下的单栅场效应晶体管空白详细规范 - semiconductor devices-discrete devices-part 8 : field-effect transistors-section 3 : blank detail specification for case-rated field-effect transistors for switching applications
半导体器件.分立器件和集成电路.第8部分:场效应晶体管.第3节:开关电路用场效应晶体管空白详细规范 - semiconductor devices-discrete devices-part 8 : field-effect transistors-section 3 : blank detail specification for case-rated field-effect transistors for switching applications
半导体器件.分立器件和集成电路.第8部分:场效应晶体管.第3节:开关电路用场效应晶体管空白详细规范 - semicoductor devices; discrete devices; part 8 : field-effect transistors; section 2 : blank detail specification for field-effect transistors for case-rated power amplifier applications
半导体器件.分立器件.第8部分:场效应晶体管.第2节:外壳限定的功率放大器用场效应晶体管空白详细规范 - It's difficult to find field - effect transistors in a sentence. 用field - effect transistors造句挺难的
- semicoductor devices; discrete devices; part 8 : field-effect transistors; section 2 : blank detail specification for field-effect transistors for case-rated power amplifier applications
半导体器件.分立器件.第8部分:场效应晶体管.第2节:外壳限定的功率放大器用场效应晶体管空白详细规范 - discrete semiconductor devices and integrated circuits-field-effect transistors-additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
分立半导体器件和集成电路.场效应晶体管.电源转换场效应晶体管测量方法中附加功率特性和amds - semiconductor, diodes, bipolar junction transistors, field-effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。 - specification for harmonized system of quality assessment for electronic components-semiconductor discrete devices-blank detail specification-field-effect transistors for case-rated power amplifier applications
电子元器件质量评估协调体系规范.半导体分立器件.空白详细规范.用于外壳额定功率放大器应用的场效应晶体管 - harmonized system of quality assessment for electronic components-semiconductor devices-discrete devices-field-effect transistors-blank detail specification for case-rated field-effect transistors for switching applications
电子元器件质量评定协调体系.半导体器件.分立器件.场效应晶体管.转换电路用场效应晶体管空白详细规范 - harmonized system of quality assessment for electronic components-semiconductor devices-discrete devices-field-effect transistors-blank detail specification for case-rated field-effect transistors for switching applications
电子元器件质量评定协调体系.半导体器件.分立器件.场效应晶体管.转换电路用场效应晶体管空白详细规范 - as a new generation of transistors, organic field-effect transistors ( ofet ) have advanced greatly not only in the technology of fabrication but also in the performances of devices and thus attracted particular attention recently
摘要近几年来，作为新一代半导体晶体管的有机场效应晶体管(ofet)在制备技术和器件性能上都取得了很大的进步，并引起了有机半导体领域研究人员的广泛关注。 - with the pentacene acting as the active layer, the diode of ito / pentacene / al, the vertical organic thin-film field-effect transistor, the organic thin-film ambipolar field-effect transistor and the organic thin-film double-field-effect transistor are fabricated
提出双栅绝缘层结构全有机薄膜场效应晶体管,达到了减少器件栅的漏电流、降低器件工作电压和提高器件工作电流的目的。 - with the pentacene acting as the active layer, the diode of ito / pentacene / al, the vertical organic thin-film field-effect transistor, the organic thin-film ambipolar field-effect transistor and the organic thin-film double-field-effect transistor are fabricated
提出双栅绝缘层结构全有机薄膜场效应晶体管,达到了减少器件栅的漏电流、降低器件工作电压和提高器件工作电流的目的。 - with the pentacene acting as the active layer, the diode of ito / pentacene / al, the vertical organic thin-film field-effect transistor, the organic thin-film ambipolar field-effect transistor and the organic thin-film double-field-effect transistor are fabricated
提出双栅绝缘层结构全有机薄膜场效应晶体管,达到了减少器件栅的漏电流、降低器件工作电压和提高器件工作电流的目的。
