基距的英文
basal spur
例句与用法
更多例句： 上一页 - Firstly , the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus , and characterlized by n & k analyzer1200 , x - ray diffraction spectroscopy ( xrd ) , scanning electronic microscopy ( sem ) , alpha - step500 . and it was analyzed that the effect on performance and structure of films with the change of argon flow , total gas pressure , the substrate - to - target distance and temperature
第一、应用稳定的直流磁控溅射设备制备tio2减反射薄膜并通过n & kanalyzer1200薄膜光学分析仪、 x射线衍射分析( xrd ) 、扫描电子显微镜( sem ) 、 alpha - step500型台阶仪等仪器对薄膜进行表征,分析氧分压、总气压、工作温度、靶基距等制备工艺参数对薄膜性能结构的影响。 - In the hipib film deposition , high purity graphite was employed as target . relations between process parameters and the microstructure , as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate , which affects the intensity and ion energy of hipib ablated plasma , and the temperature of substrate in the film deposition processes . the mechanism of film deposition by hipib ablated plasma was explored also
在薄膜沉积方面，利用高纯石墨作靶材，调整薄膜沉积过程中的靶基距(烧蚀等离子体密度、离子能量)和基片温度，研究实验工艺对hipib烧蚀等离子体方法制备的dlc薄膜的微观结构和宏观物理性能的影响，探讨了hipib烧蚀等离子体沉积dlc薄膜的成膜机理。 - Sio2 films are prepared on silicon substrates in order to get the functions of the main experiment parameters such as rf power , gas flow , vacuum gas pressure , target - substrate distance and substrate temperature on deposition rate of films . the optimized parameters ranges are obtained by considering films deposition rate , composition and structure
在bms450型磁控溅射镀膜机上优化出了制备sio _ 2薄膜的工艺参数范围，并揭示了气体流量、射频功率、靶基距、衬底温度、溅射气压等参数对薄膜沉积速率的影响规律。 - During the inspection by afm and sem , we found that the surfaces morphology of samples was even and smooth , the surface roughness was small . the films were composed of some excellent columnar crystallites . the xps results were found that zn existed only in the oxidized state and the concentration of al was less and the presence of loosely bound oxygen on the surface of azo thin films was reduced after ar + etching
由以上对azo薄膜的组织结构和光电性质的研究,我们得到了用直流反应磁控溅射法制备azo薄膜的最佳工艺条件为:氧氩比0 . 3 / 27 ,衬底温度200 ,工作压强5pa ,靶基距7 . 5cm ,功率58w ,退火温度400 。
