分子束外延的英文
epitaxy, molecular-beam
mbe
molecular beam epitaxy
例句与用法
更多例句: 下一页- In contrast to the cvd process, mbe does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully .
和化学气相淀积工艺相反,虽然在操作中对于固体砷还是必须非常小心掌握,但是,分子束外延不需要庞大的安定保险装置。 - Strain and relaxation of mbe - hgcdte films
分子束外延薄膜的应变弛豫 - Semiconductor superlattice distributed bragg reflector grown by molecular beam epitaxy
的分子束外延生长 - Interdiffusion of si and ge atoms during epitaxy growth of ge layer on si studied by raman spectroscopy
分子束外延生长高应变单量子阱激光器 - We have grown ingaas / algaas strained quantum well laser by mbe . we studied the doped density in the cladding layer
采用分子束外延设备mbe ( molecularbeamepitaxy )对所设计的应变量子阱结构激光器进行晶体生长。
百科释义
分子束外延()是使单晶材料生长的一种方法。此方法由贝尔实验室的J. R. 亚瑟()和卓以和()于1960年代后期发明的。
详细百科解释