栅宽的英文
grid width
例句与用法
- It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna
本文证明了在cmos源端degeneration结构的低噪声放大器中，忽略场效应管的栅漏电容将造成对放大管的最优栅宽估计过大。 - During this precess , using the technology of optimizing the widths of both common source mosfet and common gate mosfet under a fixed power , we obtained a compromised result of power consumption and noise figure
设计过程中,在限定功耗的前提下,主要针对共源晶体管和共栅晶体管的栅宽,对电路的性能进行了优化,使得设计的lna的噪声系数最小。 - The low insertion loss is achieved by optimizing the transistor widths and bias voltages , by minimizing the substrate resistances , and by dc biasing the transmit and receive nodes , which decreases the capacitances while increasing the p1db
通过优化mosfet的栅宽及偏置电压可以降低插入损耗。在版图设计中通过增加衬底接触降低衬底电阻,从而减小插入损耗。另外,为接收和发送端提供直流偏置可以降低p1db 。 - We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling , we designed and fabricated six set of mesfet switches with different gate width , then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established , and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling
移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
