电压漂移的英文
voltage drift
voltage-drift
例句与用法
更多例句： 下一页- Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity
Mosfet阈值电压漂移辐照效应辐照敏感性 - Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟 - Output voltage and current is often distorted in half bridge converter because voltage unbalance of input capacitors though its application is very abroad
摘要半桥逆变器应用广泛，但存在直流分压电容不均压，使分压电容中点电压漂移，导致输出电压和电流畸变的缺点。 - Specific issues examined are : compensation for the variation of the stator resistance , the offset error of the dc bus voltage , the voltage error generated by the forward voltage drop the dead time of the switches , improvement of the steady state performance , and the speed sensorless control for the pmsm dtc drive system are of major concern in this thesis
定子电阻变化，直流母线电压漂移，开关器件反向相电压降、逆变器死区时间引起的电压误差的补偿，提高系统稳态运行性能以及永磁同步电机直接转矩控制的无速度传感器运行方案等问题都是本文研究的重点。转矩的快速响应是直接转矩控制算法的一个卓越的性能。 - An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations . experimental data in the literature shows that the model predictions are in good agreement . it is simple in functional form and hence computationally efficient . it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad . in accordance with common believe , radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices . however , if the radiation sensitivity is defined in the way we did it , the results indicated nmos rather than pmos devices are more sensitive , especially at low doses . this is important from the standpoint of their possible application in dosimetry
该模型物理意义明确，参数提取方便，适合于低辐照总剂量条件下的mos器件与电路的模拟。并进一步讨论了mosfet的辐照敏感性。结果表明，尽管pmos较之nmos因辐照引起的阈值电压漂移的绝对量更大，但从mosfet阈值电压漂移量的摆幅这一角度来看，在低剂量辐照条件下nmos较之pmos显得对辐照更为敏感。
