稀释比的英文
dilute ratio
diluting ratio
dilution ratio
例句与用法
- Standard test method for dilution ratio of active solvents in cellulose nitrate solutions
硝酸纤维素溶液中活性溶剂稀释比的标准试验方法 - The dissertation mainly focuses on variation of the structure of a - si : h as functions of the dilution ratio of h2 / sih4 , substrate temperature and substrate position at low microwave power
在低微波功率下，本论文着重研究了h2 sih4稀释比、衬底温度和衬底位置对a - si ： h薄膜结构的影响。 - We experimented by varying the dilution ratio of h2 / sih4 at different substrate position , and found that the optimum dilution ratio of h2 / sih4 of system depends on substrate position
在不同的衬底位置，我们进行了h2 sih4稀释比影响a - si ： h薄膜结构的实验，发现系统最佳h2 sih4稀释比依赖于衬底位置的变化而变化。 - Based on experiments and theory analysis in the past , here we present the most important technology conditions that affecting photosensitivity : 1 、 cycle times , experiments showed that with the increase of cycle times , photosensitivity got worse ; 2 、 h dilution ratio , with the continuously increase of h dilution ratio , h ’ s bombardments on the growing surface enhanced continuously too . these bombardments can eliminate high - energy default configurations priorly and leave stable configurations behind . therefore , growing layer ’ s configurations are impacted ; default state density is decreased and photosensitivity is improved
Layer - by - layer方法的制备工艺条件很多,我们在以往实验和理论分析的基础上,介绍了对光敏性影响最为重要的工艺条件: 1 、循环次数的影响,实验表明随着循环次数地增加,光敏性变差; 2 、 h稀释比的影响,随着h稀释比的不断增加, h对生长表面的轰击不断增强,这些轰击能优先消除高能缺陷结构而留下稳定的结构,从而使生长层结构致密,减少缺陷态密度,提高薄膜的光敏性。 - The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films . in the paper , ch and si - hn of a - si : h films , fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method , have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting . the effects of ratio of h2 / sih4 on ch and si - hn are studied
Fourier红外透射( ftir )谱是研究氢化非晶硅( a - si : h )薄膜中氢含量( c _ h )及硅-氢键合模式( si - h _ n )最有效的手段，对于微波等离子体化学气相沉积( mwecrcvd )方法在不同h _ 2 sih _ 4稀释比下制备出的氢化非晶硅薄膜，我们通过红外透射光谱的基线拟合、高斯拟合分析，得出了薄膜中的氢含量，硅氢键合方式及其组分，并分析了这些参数随h _ 2 sih _ 4稀释比变化的规律。
