限制层的英文
limiting layer
例句与用法
- The structure of the strained quantum well laser has been optimized , not only the well layer , the barrier layer , the waveguide layer and the cladding layer but also the content of al , in have been studied and designed
对应变量子阱激光器的结构进行了优化设计，对半导体激光器的阱层、垒层、波导层和限制层的厚度及in 、 al元素的含量进行了研究和设计。 - The results show that if n - dbr is neglected , the theoretical calculations are in good agreement with the references . but our results also indicate that n - dbr has very important influences on the properties of vcsels and if it is not considered , there must be some errors . and double oxide - confining regions offer a method of decreasing threshold current and controlling high order modes
结果表明，当不考虑n - dbr的影响时，我们的理论计算结果与文献报道相符；但通过计算可知n - dbr对vcsel特性有较大影响，如果不考虑会带来误差；同时双氧化限制层为vcsel器件提供了一种降低阈值，抑制高阶横模的方法。 - With the finite - difference method , self - consistent solutions for the possion ' s equation , injected current density , carrier concentration , optical field and thermal conduction equations have been realized to study the thermal - field properties , the coupling of electricity , thermal and optical - fields , and the influences of n - dbr and double oxide - confining regions on the characteristics of vcsels
本文建立了一个直接耦合的准三维理论模型，通过有限差分法求解泊松方程、载流子扩散方程、热传导方程和光场方程的自洽解，研究了vcsel的热场分布特性，并实现了电、热和光场的耦合，同时考虑了n - dbr及双氧化限制层对vcsel特性的影响。 - The main work can be summed up as follows : firstly , we studied the thermal - field properties of vcsels , and analyzed the influences of current spreading , material parameters and operating conditions on the temperature distributions . secondly , we began with the electrode voltage and calculated the equipotential s distributions , compared the distributions of voltages and current densities in different depths of vcsels , and then studied the influences of the oxide - confining region with different position or thickness , and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density , carrier concentration and temperature in the active region . thirdly , we realized the coupling of electricity , optical and thermal - fields , worked out the threshold voltage , calculated the distributions of the injected current density , carrier concentration and temperature under different offset voltages , and analyzed the impacts of temperature profile and carrier density on the refractive index , fermi levels and optical - field
具体工作可以概括如下：首先，研究了vcsel的热场特性，分析了电流扩展，材料参数和工作条件对于温度分布的影响；其次，从电极电压入手，计算出激光器中的等势线分布，并对不同深度处的电压和电流分布进行比较，研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响；再次，实现了电、光、热耦合，求出了阈值电压，计算了不同偏置电压下的电流密度分布、载流子浓度分布和热场分布，分析了温度和载流子浓度变化对折射率、费米能级和光场的影响；最后，给出了考虑n - dbr和双氧化限制层时激光器中的等势线分布，分析了n - dbr和双氧化限制层对vcsel电流密度、载流子浓度、温度和光场分布的影响。
