mos晶体管的英文

• mos transistor

• "mo"英文翻译    n. 〔俚、谑〕＝ moment. Wait half ...
• "晶体管"英文翻译    transistor; crystal valve
• "双极mos场效应晶体管的" 英文翻译 :    bipolar mosfetic
• "mos金属氧化物半导体场效应晶体管" 英文翻译 :    mos field effect transistor
• "晶体管" 英文翻译 :    transistor; crystal valve 硅晶体管 silicon transistor; 锗晶体管 germanium transistor; 晶体管放大器 transistor amplifier; transistorized amplifier; 晶体管管座 stem; 晶体管计算机 transistored computer; 晶体管接收机 transistor receiver; 晶体管收音机 transistor; transistor radio; 晶体管钟transistor clock; 晶体管自动计算机 transistor automatic computer
• "晶体管；半导体管" 英文翻译 :    transistor
• "晶体管 晶体管逻辑" 英文翻译 :    transistor transistor logic; ttl logic
• "晶体管-晶体管逻辑门" 英文翻译 :    transistor-transistor logic gate
• "晶体管，晶体管收音机" 英文翻译 :    transistor
• "晶体管晶体管逻辑" 英文翻译 :    logic, transistor-transistor (ttl); t2l; transistor-transistor logic; twin transistor logic
• "nmos晶体管" 英文翻译 :    nmos transistor
• "npn晶体管" 英文翻译 :    npn transistor
• "npn型晶体管" 英文翻译 :    npn transister
• "pnp晶体管" 英文翻译 :    pnp transistor; pnp-ransistor
• "pnp型晶体管" 英文翻译 :    pnp transistor
• "p型晶体管" 英文翻译 :    p-type transistor
• "t晶体管模式" 英文翻译 :    tee transistor model
• "薄膜晶体管" 英文翻译 :    tft thin film transistor; tfts; tft，thin film transistor; thin-film transistor
• "本征晶体管" 英文翻译 :    intrinsic transistor
• "变容晶体管" 英文翻译 :    capacitance-variable tra istor; capacitance-variable transistor
• "玻封晶体管" 英文翻译 :    gla sealed tra istor; glass sealed transistor
• "场控晶体管" 英文翻译 :    field transistor; field-controlled transistor; fieldistor
• "场效晶体管" 英文翻译 :    fet; field-effect transistor
• "存储晶体管" 英文翻译 :    memory transistor
• "带型晶体管" 英文翻译 :    stritransistor

• In this paper , they are set forth at first that the kinds of computer - simulation of electronic devices , the development and the requirements of mosfet ' s model and the way of gain the models " parameters , , the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3 , they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on , so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency , intermediate frequency and high frequency have been built in chapter 4 and chapter 5 , although the equivalent circuit models in pspice are used for reference to bui id them , they have their own characteristics which are analyzed at a i i kinds of situations , so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6
  本文首先介绍了电子器件计算机模拟的分类、 mosfet的建模发展动态、对器件模型的要求以及模型参数的提取方法。在第二章中建立了mos晶体管在直流端电压条件下的工作模型；第三章推导了mosfet的大信号模型，这两类模型不同于传统模拟软件例如pspice中的等效电路模型，而是从模型方程出发，采用数值模拟的方法，提高了模拟的精度。第四章和第五章分别建立了mos晶体管低频、中频、高频的小信号模型，虽然借鉴了pspice模拟软件中用等效电路模型的方法，但是本文分别讨论了准静态和非准静态时器件的本征部分以及包含非本征部分工作于低频、中频和高频条件时的模型，可以根据这些模型编写相应的模拟软件，这样在做器件的模拟分析与器件设计的时候，就可以利用模拟软件逐步深入地分析器件在不同的条件下和器件的不同部分在工作时的各种小信号特性，有利于抓住器件工作的本质特性，设计出符合要求的各类通用和特殊器件。
• After introduction of the tranlinear loop principal , the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower . as for modern integrated circuit , the model of mos transistor , the active resistance and the current mirror integrated circuit formed by mos transistor are introduced . the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation
  针对现代集成电路的工艺,本文对mos晶体管的工作原理进行了简要的叙述,讨论了有源电阻和电流镜的实现方法,并利用mos晶体管的亚阈值特性组成混合跨导线性回路完成对应的电压跟随器的设计,推导出了基于cmos技术的电流控制传送器。
• Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied . the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too . the accumulation - mode varactor , which has a higher quality factor value than the inversion - mode mos varactor , is studied in detail
  研究电感和变容管这两种射频集成无源器件的寄生效应和射频mos晶体管的热噪声模型,提出集成电感的设计原则和优化方法,详细研究了一种新型的积累型mos可变电容,这种积累型mos变容管比一般的反型mos变容管有更高的品质因数。