algaas造句
例句与造句
- Aluminium gallium arsenide , algaas
砷化镓铝 - Effect of high aluminum algaas oxidized layers on vertical - cavity surface - emitting lasers
的激光二极管线列阵光纤耦合器件 - Finally , we got the 940nm ingaas / algaas strained quantum well semiconductor laser
最终获得ingaas / algaas结构的940nm应变量子阱半导体激光器。 - In this thesis , the 940nm high power ingaas / algaas strained quantum well semiconductor laser has been studied
论文对ingaas / algaas高功率940nm应变量子阱半导体激光器进行了研究。 - An experimental approach is given for the measurement of the beam quality factors of an ingaas / algaas sch dqw laser
本文还通过实验测量了ingaas algaasschdqw激光器的光束质量因子m ~ 2 。 - It's difficult to find algaas in a sentence. 用algaas造句挺难的
- The inherent defects and limitations of the conventional gaas / algaas qwips , which are lead by the structure , were analyzed
分析了常规gaas algaas量子阱红外探测器由于其结构所带来的固有缺点及限制。 - 3 . the principle of the novel gaas / algaas qwips and the strongpoints of the new structure were elucidated in detail
详细叙述了新型gaas algaas量子阱红外探测器的工作原理及这种新型结构所带来的诸多优点。 - We have grown ingaas / algaas strained quantum well laser by mbe . we studied the doped density in the cladding layer
采用分子束外延设备mbe ( molecularbeamepitaxy )对所设计的应变量子阱结构激光器进行晶体生长。 - All is the base work in the aspect of vcsel that a vcsel and a algaas microtip can be integrated and established as a vcsel / snom sensors
这些主要都是为了打好将vcsel与algaas探尖胶合起来，构成vcsel snom复合探针做些在vcsel特性方面的基础研究。 - For the algaas / gaas vcsel fabrication , oxide - confined structure provid electrical and optical confinement . algaas / gaas vcsel fabricated by selective oxidation and selective etching
在vcsel器件研制方面，我们采用氧化物限制结构来对其的电流和光场进行限制。 - We studied the factor that influence the quality of gaas , algaas and ingaas by mbe , and studied the growth temperature , growth time and the flux ratio of v - iii beam
研究了影响mbe生长gaas 、 algaas和ingaas等单晶材料质量的一些因素，对mbe生长温度、生长时间和生长时的-族束流比进行了研究。 - With the development of gesi epitaxy technology , the performance of gesi hbts is already superior to si bjts , and to algaas / gaas hbts and gaas mesfets in some aspects , so the gesi hbts have much prospect for wide applications
随着gesi外延技术的发展， gesihbt的性能远远优于sibjt ，并在某些方面优于algaas / gaashbt 、 gaasmesfet ，所以gesihbt具有广阔的应用前景。 - The mechanism of conventional gaas / algaas qwips is introduced , including the property of the intersubband absorption between bound states , three kinds of qwips that are different in the first excited - state position , and the comparison of these different qwips
介绍了常规gaas algaas量子阱红外探测器的工作机理，其中包括束缚态子带间吸收的特性和三种不同激发态位置的qwips ，并对三者进行了比较。 - It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ) , and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects
Sige异质结双极晶体管（ sigehbt ）的高频性能大大优于si双极晶体管（ sibjt ） ，并在某些方面优于algaas / gaasmesfet ，所以sigehbt具有广阔的应用前景。 - Many kinds of vcsels has been fabricated in the domestic and an kind of algaas microtip with micrometer dimension has been successfully grown on gaas substrate with self - organization by liquid phase epitaxy ( lpe ) . it was reported that a vcsel and a si microtip can be simply aligned together using an adhesive agent . hi this article , the peculiarity of vcsel has been observed and investigated
在vcsel的制备方面，国内也已经有着很成熟的经验，已经成功的制造出了多种类型的器件；我们半导体教研室利用现有的液相外延生长设备采用自组织生长的方法成功制备出外观形貌规整的m量级尺寸的algaas的类探针点。
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