mesfet造句
例句与造句
- metal semiconductor field effect transistor mesfet
金属半导体场效应管 - investigation of the pinch off voltage of sic-mesfet
器件的夹断电压 - transient-state thermal model of gaas mesfet microwave pulsed power amplifier
脉冲微波功率器件瞬态热场模型 - multi-gate gaas mesfet switch
开关的结构设计 - influence of ab microdefects in lec semi-insulating gaas substrate on property of mesfet
对有机电致发光器件特性的影响 - It's difficult to find mesfet in a sentence. 用mesfet造句挺难的
- numerical simulation of the influence of high power electromagnetic pulses on gaas mesfet
高功率电磁脉冲对砷化镓金属半导体场效应管的影响 - deep level defects is one of factors responses for the distribution of mesfet threshold voltage
我们认为这一现象与sigaas衬底深能级缺陷有关。 - for the first time, an integrated hall switch based on gaas mesfet process was fabricated
论文首次采用gaas直接离子注入mesfet集成电路工艺,研制出了gaas霍尔开关集成电路。 - a power circuit is designed for mesfet vco circuit with dc + 5v output and adjustable negative voltage output
该电路由十12v电源供电,提供正负两组电压输出,输出电压幅度可调。 - 2 . the nonlinear input-output characteristics of a gaas mesfet is modeled by the use of volterra series in the frequency domain
本文通过神经网络和volterra级数的等价性,用训练后的神经网络确定出volterra级数的核函数。 - results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed-gate process
结果表明,采用平面工艺制备的gaasmesfet阈值电压均匀性比采用挖槽工艺制备的gaasmesfet阈值电压均匀性更好。 - it simplifies the optimization of feedback components and accelerates the design of negative impedance oscillator . a 14ghz mesfet vco is designed and simulated with hp ads
根据该设计理论,用hpads进行了14ghzmesfetvco的设计与仿真,并对设计的电路进行了制作与测试。 - single pole double throw switch ( spdt ) mainly complete the conversion of the signal between difference channels, the control element in common use is pin diode and gaas mesfet
单刀双掷开关(spdt)主要用来完成信号在不同信道间的转换,其常用的控制器件有pin管和gaasmesfet两种。 - at last, we tried to explain the reason of the above relationship . on the other hand, we proved the relationship between ab microdefects and mesfet devices performance via pl mapping method
同时,解释了产生上述关系的原因。另外,试验还利用plmapping技术从另一个角度检验了衬底质量和mesfet器件电性能的关系。 - the influence of different process on gaas mesfet sidegating effect has been studied . these process include recessed-gate process, planar selectively implanted process and planar boron implanted process
本文对分别采用隔离注入挖槽、平面自隔离和平面离子注入隔离三种工艺制备的gaasmesfet旁栅效应进行了研究。
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