mesfet造句

"mesfet"是什么意思   

例句与造句

  1. metal semiconductor field effect transistor mesfet
    金属半导体场效应管
  2. investigation of the pinch off voltage of sic-mesfet
    器件的夹断电压
  3. transient-state thermal model of gaas mesfet microwave pulsed power amplifier
    脉冲微波功率器件瞬态热场模型
  4. multi-gate gaas mesfet switch
    开关的结构设计
  5. influence of ab microdefects in lec semi-insulating gaas substrate on property of mesfet
    对有机电致发光器件特性的影响
  6. It's difficult to find mesfet in a sentence. 用mesfet造句挺难的
  7. numerical simulation of the influence of high power electromagnetic pulses on gaas mesfet
    高功率电磁脉冲对砷化镓金属半导体场效应管的影响
  8. deep level defects is one of factors responses for the distribution of mesfet threshold voltage
    我们认为这一现象与sigaas衬底深能级缺陷有关。
  9. for the first time, an integrated hall switch based on gaas mesfet process was fabricated
    论文首次采用gaas直接离子注入mesfet集成电路工艺,研制出了gaas霍尔开关集成电路。
  10. a power circuit is designed for mesfet vco circuit with dc + 5v output and adjustable negative voltage output
    该电路由十12v电源供电,提供正负两组电压输出,输出电压幅度可调。
  11. 2 . the nonlinear input-output characteristics of a gaas mesfet is modeled by the use of volterra series in the frequency domain
    本文通过神经网络和volterra级数的等价性,用训练后的神经网络确定出volterra级数的核函数。
  12. results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed-gate process
    结果表明,采用平面工艺制备的gaasmesfet阈值电压均匀性比采用挖槽工艺制备的gaasmesfet阈值电压均匀性更好。
  13. it simplifies the optimization of feedback components and accelerates the design of negative impedance oscillator . a 14ghz mesfet vco is designed and simulated with hp ads
    根据该设计理论,用hpads进行了14ghzmesfetvco的设计与仿真,并对设计的电路进行了制作与测试。
  14. single pole double throw switch ( spdt ) mainly complete the conversion of the signal between difference channels, the control element in common use is pin diode and gaas mesfet
    单刀双掷开关(spdt)主要用来完成信号在不同信道间的转换,其常用的控制器件有pin管和gaasmesfet两种。
  15. at last, we tried to explain the reason of the above relationship . on the other hand, we proved the relationship between ab microdefects and mesfet devices performance via pl mapping method
    同时,解释了产生上述关系的原因。另外,试验还利用plmapping技术从另一个角度检验了衬底质量和mesfet器件电性能的关系。
  16. the influence of different process on gaas mesfet sidegating effect has been studied . these process include recessed-gate process, planar selectively implanted process and planar boron implanted process
    本文对分别采用隔离注入挖槽、平面自隔离和平面离子注入隔离三种工艺制备的gaasmesfet旁栅效应进行了研究。
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