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oxygen plasma中文是什么意思

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用"oxygen plasma"造句"oxygen plasma"怎么读"oxygen plasma" in a sentence
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  • 氧等离子体
例句与用法
  • Influence of in - situ oxygen plasma processing on the resistivity of diamond thin film
    原位氧等离子体处理对金刚石薄膜电阻率的影响
  • Found that antistatic property of flock fabric was increased when the flock was treated by oxygen plasma
    实验表明经氧等离子处理的绒毛制得的植绒织物其抗静电性能提高。
  • In order to modify wool fabrics properties , low - temperature oxygen plasma is used to treat wool fabric
    摘要为了改善羊毛织物的毡缩、润湿等性能,采用低温氧等离子体对羊毛织物进行改性处理。
  • To approach as a resist in dry etching processing , etching properties of the films in oxygen plasma have been investigated
    为了探索该种薄膜在干刻蚀工艺过程中用作掩膜的可能性,还研究了它在氧离子体中的刻蚀性能。
  • On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
    另一方面,氧等离子体处理使ito薄膜表面的富sn氧化物进一步氧化,形成稳定的sno ,减少了ito薄膜表面的氧空位和sn ~ ( 4 + )数量,使其功函数增大。
  • It is found that ito surface roughness decreased after oxygen plasma treatment , which can improve its wetting performance and consequently improve the film performance
    经氧等离子体处理后, ito薄膜的表面粗糙度减小,平整度提高,提高了ito薄膜表面的润湿性能,改善了有机物在其表面的成膜性能。
  • The experiment result shows that with low - temperature oxygen plasma treatment , fabric ' s shrinkage and wettability have bettered a great deal , and fabric ' s breaking strength and breaking elongation is also increased in given condition
    有效控制处理条件,织物的断裂强力和伸长率不但不会减小,反而可以得到一定程度的增强。
  • The results show that amorphous carbon films have high etching resistance against oxygen plasma , and etch rates of the films correlated not only with etching processing parameters , also with deposition conditions
    结果表明非晶碳膜对于氧离子体具有高的抗刻蚀性,其刻蚀率不仅与刻蚀的过程参量有关,而且决定于膜的沉积条件。
  • In the present work , water plasma ion implantation , instead of the conventional oxygen plasma ion implantation , has been employed to fabricate soi materials . the masses of the three dominant ion species in the water vapor plasma , h2o + , ho + , and o + , are very close to each other , which overcome the problem of co - existence of o and 02 in oxygen plasma source . the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much , which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
    本论文创造性地采用水等离子体离子注入方式代替传统的氧离子注入方式来制备soi结构材料,由于水等离子体中的三种离子h _ 2o ~ + 、 ho ~ +和o ~ +质量数相差很小,克服了氧等离子体中因o _ 2 ~ +和o ~ +质量数相差大而引起的氧在硅中的分布弥散,使注入硅后的氧射程分布相对集中,比较容易退火后形成soi结构材料。
  • The chief results and conclusion thus arrived at are as folloes : ( 1 ) the morphology and electrical properties of indium - tin - oxide ( ito ) films which were treated respectively by ethanol , naoh , sulfuric and oxygen plasma , were studied from microscopic view by atomic force microscopy , x - ray photoelectron spectroscopy and goniometer
    ( 1 )利用原子力显微镜、接触角测试仪、紫外分光光度计从微观角度研究了乙醇、氢氧化钠、浓硫酸、氧等离子体处理对ito薄膜的表面性能和光电性能的影响。
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