The gradient films and the modification of the microstructure can be realized by the post - heating . then the novel antireflecting energy saving coating glass is achieved . it is also found when the temperature and time of the post - heating increases , the average reflectivity will decrease and the average transmission will increase 实验结果表明，随着退火处理温度的升高和退火时间的延长，镀膜玻璃的平均反射比呈线性下降的趋势，而其平均透射比则呈现增大的趋势，不过前者的下降趋势更加剧烈和明显。
Among various fabrication techniques of thin film , the sol - gel process has gained much interest for the preparation of pzt thin film , due to ihe advantages of good homogeneity , easy control of composition , low in - ill i reaving temperature , easy formation of large area thin films pb ( zrxti : - k ) 0 : , ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ) . lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate Pzt的制备方法有很多，其中溶胶?凝胶( sol - gel )方法可以和集成电路( ic )光刻工艺相互兼容，处理温度低，有大面积涂敷性能，能精确地控制组分，无需复杂的真空设备，成本低廉，所以对于集成铁电薄膜电容的应用这种方法有很广阔的前景。本文利用sol - gel技术在掺锡的in _ 2o _ 3透明导电薄膜( ito )衬底和低阻硅衬底上成功地制备了pzt铁电薄膜。运用了x射线衍射， sawyer - tower电路和lcr电桥分别对薄膜的晶化温度，结构和电学性能进行了测试。
To achieve this aim , the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis . three parts are studied in our work , firstly , the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied , then put it into the process of solar cell and compare the capability of solar cell in two process 作为该项研究的先期工作，首先以p型( 100 )太阳电池用直拉硅片为实验样品，摸索出热退火的最佳处理温度；然后用常规工艺制备了单晶硅太阳电池，测试效率；结果发现用经过热处理的硅片衬底制备的太阳电池比用没有经过热处理的硅片衬底制备的太阳电池其效率有明显改善。
Having been treated at variable temperature in atmosphere , we can get the conclusions : ( 1 ) treated at 300 , there are little diffusion coefficients between cu and cr ; ( 2 ) treated over 500 , cr and cu diffuse into each other evidently . cu film oxidizes and there are cracks in cr film 得到以下结论：在300oc处理温度下， cr 、 cu之间的相互扩散小， cr膜致密， cu膜没有显著的氧化，能够满足薄膜导带的要求；但是升高温度至500oc以上， cr 、 cu膜之间的扩散加剧， cr膜表面出现裂纹， cu膜被氧化。
However , the refractive index will increase with the increase of the flow ratio of sifu / nhs , slightly increase with the increase of substrate temperate , and decrease with the increase of rf power . by measuring the passivation results of hydrogen plasma and sinx thin film , we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment , although it has little to do with the annealing temperature and time . the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon , but after annealing at high temperature the mobility turns down 通过测试氢等离子体钝化和氮化硅薄膜钝化的效果，实验还发现氢等离子体处理对多晶硅材料的少子寿命提高作用比较明显，但是这种提高作用与处理温度以浙江大学硕士学位论文王晓泉2003年5月及时间的关系不大；氨化硅薄膜中的氢对单晶硅的载流子迁移率提高有一定作用，但经过高温处理后这种作用消失；氮化硅薄膜能提高单晶硅和多晶硅的少子寿命，具有表面钝化和体钝化的双重作用；氢等离子体和氮化硅薄膜都能有效地提高单晶和多晶电池的短路电流密度，进而使电池效率有不同程度（绝对转换效率0
( 3 ) according to the study of heat treatment process , heat treatment ambience , airflow and heat treatment temperature were considerd as the important influences on the quality and property of ybco films . through optimizing the process , the ybco films were prepared on sto single crystal , and their room temperature resistance was about 200 ybco films also were fabricated on the sto buffered si substrate , and their room temperature resistance was about 300d ( 3 )根据本文热处理过程的工艺探索，认为热处理气氛、气流量及处理温度是影响薄膜质量及性能的重要因素，通过优化工艺过程，在钛酸锶( sto )单晶上制得的ybco薄膜表面质量良好，室温电阻200左右；而在预制了钛酸锶( sto )缓冲层的si基板上制备的ybco薄膜的室温电阻为300左右。
In the view of hydrolyze coating way , ph value , treating temperature , concentration of premonitory matter solution , buffer solution amount and premonitory matter amount affect the coat layer forming mainly . according to the results of experiments , the best technical condition is that ph = 6 . 5 , [ al3 + ] = 0 . 064mol / l , t = 343k , vbugersoiution = 40ml 水解包覆工艺改性研究结果表明： ph值，处理温度，覆层前驱物溶液的浓度、缓冲溶液加入量和覆层前驱物加入量这几个因素对石墨表面覆层形成存在重要影响。
