The field in large - aperture photoconductors is mainly composed of bias field , space - charge field formed by transient distributing of carriers 光电导体内的电场是偏置电场、光电导体内光生载流子的空间瞬态分布所形成的空间电荷电场等叠加形成的合电场。
Using the " hopping model " , the analytical solutions of the space - charge field fundamental harmonics in the presence of an externally applied magnetic field are presented 摘要从“跳跃模型”出发，给出有磁场情况下的跳跃方程及稳态情况下空间电荷场的解。
Space charges is often created by trapping or preventing their movement due to various traps , as a result trap properties decide the store and transport of the charge 空间电荷往往是各类陷阱俘获和阻止电荷运动造成的，陷阱的性质决定着电荷的存贮和输运。
Compared with the traditional tto , its start - up current is much less , and its larger cylindrical volume allows a higher space charge limit current 对于在电流临近空间电荷限制电流和大信号时，径向电子束与径向间隙内微波电场的非线性相互作用过程进行了初步的研究。
By employing a 2 . 5d particle - in - cell code , which involves the space - charge - effect and the nonlinear beam - wave interaction , the microwave development process in rtto is simulated 利用考虑了空间电荷效应和束波非线性相互作用的2 . 5维pic粒子模拟程序，我们模拟了rtto中微波的产生。
In this paper , space charge distribution in dc composite insulator frp rod materials after negative dc high voltage application was measured by pea method and the results were analyzed and discussed 摘要使用pea法空间电荷测量系统测量了负直流高压电场作用后复合绝缘子芯棒材料中空间电荷分布，并进行了相关的分析和讨论。
When the current is larger , the space - charge - effect of the electron beam will greatly affect the microwave production . the frequency and mode of microwave will change and the output power will decrease obviously 电流较大时，电子束的空间电荷效应影响很大，微波频率和模式都会发生变化，输出微波功率显著降低， rtto不能正常工作。
And some relevant property parameters of waveguides are measured . based on the band transport model , the buildup of space charge field and the light - induced refractive index changes in photorefractive crystals are discussed 首先根据带输运模型的动力学方程组，讨论了光折变晶体中光致空间电荷场的建立以及由此而产生的折射率变化。
Oppositely , sp ace - charge field changes along with the movement of the carriers , and influences the movement of carriers synchronously . it ' s an intricate process and can not to be ignored in pcss ' s 而空间电荷电场随着载流子的空间位置的变化而变化，并同时影响载流子的瞬间运动状态，其变化复杂，并且对载流子运动的影响不容忽视。
The influence of incomplete ionization of impurity in 6h - sic on mosfet electrical characteristics is investigated considering the frenkel - pool effect , which can enhance the impurity ionization by lowing the effective barrier height 把frenkel - pool效应引入了对sicmos表面空间电荷区杂质不完全离化的分析，并建立起了在电场作用下sic杂质离化的新的模型。
