The cmp experiment was carried out systematically on litao3 wafer . the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition , pressure , rotating speed of the polishing plate , the type and size of abrasive , and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details 通过对钽酸锂晶片的化学机械抛光过程的实验研究，通过测量钽酸锂晶片在不同抛光条件下的表面粗糙度和材料去除率，详细分析了抛光垫材料和状态、抛光压力、抛光盘转速、磨料种类及粒度、抛光液组成等几个因素对抛光表面质量和材料去除率的影响规律。
Litao3 wafers are machined ususlly by chemical mechnical polishing in industry . based on the investigation of the mechanical property of tantalum lithium crystal wafer and theory analysis of polishing movement tracks , this thesis discusses its mechanism of cmp , presents its polishing characteristics and analyzes the effects of polishing condition parameters upon cmp 本论文通过对钽酸锂晶片的化学机械抛光过程的实验研究和抛光运动轨迹的理论分析，研究钽酸锂晶片的抛光加工特性，探讨钽酸锂晶片化学机械抛光机理，系统分析主要工艺参数对化学机械抛光过程的影响规律。
