Relativistic back wave oscillator ( rbwo ) with a coaxial structure has a big power capacity of system . with large radius electron beam to decrease the space charge effects without usage of high current , hence the rbwo can work well at a lower axial guide magnetic field 同轴返波管具有很大的功率容量,可以采用大半径电子注,在工作电流不变的情况下空间电荷效应大幅度降低,因而可工作在低磁场状态。
We consider the solid electron beam . the hot dispersion relation including the electron beam space charge effect is obtained in this paper , by series of propagating with using of the boundary condition and combining with the field matching method 考虑实心电子注，分区求出各区慢电磁波的场方程，然后利用边界条件，用严格的场匹配方法，经过一系列的推导得到了考虑空间电荷效应的“热”色散方程。
Due to different trap depths , physical reactions and chemical reactions , space charge in frp rod materials had different polarities and densities is influenced by temperature evidently , especially between 20 and 40 and between 100 and 120 由于陷阱深度的不同和物理、化学变化的作用，不同温度下芯棒材料内空间电荷的积聚极性和积聚量不同，特别是在20和40之间以及100和120之间存在明显变化。
The polymer is widely used in fields of electric and electronic insulation , but local fields ( electric fields , mechanical stress ) distortion induced by space charges in polymers will greatly affect properties of polarization , conductance , short - term breakdown and long - term breakdown 聚合物在电气、电子绝缘中应用极为广泛，但其中的空间电荷诱导的局部场（电场、力场）畸变，将对极化、电导、短时及长时击穿特性带来巨大影响。
2 . to design an axial magnetic field . the cathode lies in 0 . 4 - 0 . 7 of peak value of the magnetic field and excursion channel in a uniform magnetic field to suppress space charge effects ; to design transition section between the gun and excursion channel in converse computation . 3 选择电子枪阴极处于轴向聚焦磁场峰值的0 . 4 - 0 . 7倍处;漂移通道(互作用区)位于均匀轴向聚焦磁场中,以抑制电子束的空间电荷效应;使用反算法设计电子枪和漂移通道之间的过渡区。
The numerical computing methods of the equations involving the static electric - magnetic field , electronic motion in the static electric - magnetic field , and so on are detailed . the methods of the boundary disposal are introduced . the phenomenon of secondary electron emission has also been studied 介绍了数值计算方法,包括静电磁场的数值计算、在静电静磁场中电子运动轨迹的数值计算、空间电荷密度的数值计算和空间电位分布的数值计算;介绍了边界处理方法。
Because of the great potential of sic mosfets and circuits , in this paper , the characteristics of 6h - sic pmosfets are studied systematically , emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly , the crystal structure of silicon carbide , the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented . the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation 研究了sic的晶体结构，分析了sic中杂质的不完全离化现象以及sic中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了sicpmos空间电荷区的电特性；本论文重点分析了界面态分布和源漏串联电阻对sicpmos器件特性的影响。
With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics . the software included field section , grid point numbering , and the calculation of electric currents , transconductance and cathode capacitance , moreover , it can simulate the properties of vacuum microeletronic with variant structures and sizes . the relationship was studied and simulated among electic properties and device structures , sizes and cathode materials etc . the optimized design of vacuum microtiode was proposed 本文在深入研究真空微电子器件场致发射理论的基础上，根据圆锥形、楔形阴极真空微电子三极管的不同特点，分别建立了物理和数学模型，在考虑空间电荷密度影响的前提下，以有限元法为基础采用迭代的方法计算出真空微电子三极管内的电势分布情况，绘制出了等势线、电子轨迹线，并得到了器件电学性能随几何参数的变化情况。
In respect of sic devices , an analytical model of 6h - sic jfet to well match the experimental results is proposed . the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal , mobility degradation and space charge density decrease 对sicjfet的电参数如电子浓度，迁移率，电阻率和空间电荷区密度在中子辐照下的变化进行了分析，提出了中子辐照下6h - sicjfet的器件模型，利用此模型对sicjfet在室温和300时的辐照响应进行模拟的结果和实验值相符。
Numerical simulation results indicate that , for low temperature dust particles , dust particles mainly exist in the area near the column center and their charge - number can be considered as a constant , while in the area where there are no dust particles , ion and electrons are in ambipolar diffusion ; for high temperature dust particles , both the distribution regions of dust particle and high ion density are expanded and dust charge - number is increasing with the distance from the center 计算结果表明：当尘埃粒子的温度较低时，尘埃粒子主要集中在圆柱形放电器的中心很小的区域，尘埃粒子携带的电荷几乎是一个常数，受尘埃粒子空间电荷的影响，离子在该区域的密度最高。在远离中心区域，离子和电子呈现双及扩散特点；当尘埃粒子的温度较高时，尘埃粒子分布的区域和高离子密度区域扩大，尘埃粒子离放电器中心越远，携带的负电荷越多。
