And then the method to reduce the optics loss was discussed too in this paper . the research indicated that the crystallized phase and degree of orientation were dependent on annealing temperature 研究了各生长条件如退火温度、前驱溶液、衬底类型、缓冲层( ksbn 、 mgo )等参数对sbn薄膜性能的影响以及降低光学损耗的措施等。
The changes of the structure , optical and electrical properties of znte ( znte : cu ) polycrystalline thin films deposited by co - evaporation with cooper concentration and annealing temperature have been systematically studied 研究了共蒸发法制备的znte ( znte ： cu )多晶薄膜的结构、光学、电学性质随掺铜浓度、退火温度的变化。
Films . the films grown at 200 , annealed for 5min at different temperatures ranged from 280 to 820 are carefully compared to study the effect of annealing temperature . the film acquired at the highest 在沉积温度为200 ，退火时间5min时，改变退火温度得到一组薄膜，研究退火温度对超导薄膜性质的影响，得到了转变温度-退火温度曲线。
When the annealing temperayure was 400 , the stress of film was from tensile stress to compressive stress . when the annealing temperayure was 600 , the full - width at half - maximum ( fwhm ) was the narrowest from xrd pattern 研究发现,在空气中退火温度到400时,薄膜的应力由拉应力转变为压应力, 600时, zno薄膜的半峰款最窄。
In the course of shs , the content of liquid phase plays an important role in it , and the content of oxidant and dilution and the temperature of heat treatment can influent the phase and the size of the product 在shs合成过程中液相量的多少和shs反应有很大的关系，氧化剂、稀释剂的含量，以及退火温度对产物物相和颗粒尺寸都有一定影响。
The tbzre glass has great forming ability , which can form glassy body under relative slow cooling ratio . moreover , the technique of glass ' s annealing is easy . the npre - 1 glass has strong viscosity 其中亚碲酸盐玻璃（ tbzre ）成玻能力强，在较慢的冷却速率下也能得到非晶玻璃；且退火工艺简单，退火温度下保持一小时后再冷却到室温即可。
Furthermore , zno quantum dot was embedded in sio2 host film under best condition . the effect of the annealing temperature on the quality of zno quantum dot was analysed . the follow is the main result of my experiment 然后选择最佳的实验条件，制备了sio _ 2基质中包埋的氧化锌量子点；对其进行热处理，分析了退火温度对薄膜光学性质的影响。
However , the rms of the films decrease as the annealing temperature increase when the annealing temperature is higher than 750 . with the annealing temperature increase , the film oxygen content and the ratio of mn4 + / mn3 + increase 退火温度在650 - 750之间,表面粗糙度随退火温度的升高而增大,在750 - 850之间,表面粗糙度随温度的升高而减小。
And then , we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks 然后，通过x射线衍射测量了样品的衍射谱，通过比较不同样品衍射峰的形状，了解了不同退火温度及注入条件下样品的晶格结构情况。
Compared with testing results at different annealing temperatures ranging from 350 to 500 c , it was found that vo _ 2 film annealed at 450 c exhibits lower phase transition temperature and significant resistance change 通过对比不同退火温度下的测试结果可知:经450退火后的掺杂vo _ 2薄膜与其它退火温度所得的vo _ 2薄膜相比,具有较低的相变温度以及较为明显的电阻突变数量级。
