In order to compete with crystalline silicon ( c - si ) solar cells , the thin - film si - based ones should have at least equivalent performance and lower cost 为了同单晶硅太阳能电池竞争，薄膜型光电池必须在性能方面与之相当，成本应该更低。
The larger part of research funds has been devoted to the study of single crystal silicon solar cells , despite the evidence that this technique holds little promise 大部分资金用于研究单晶硅太阳能电池，虽然证据表明这种技术前景并不乐观。
Specification for harmonized system of quality assessment for electronic components - blank detail specification - mos read write dynamic memories silicon monolithic circuits 电子元器件用质量评估协调体系.空白详细规范. mos读写动态存贮器单晶硅电路
Porous silicon ( ps ) is a new type silicon - based material developed in recent years , which has different properties compared with the crystalline silicon materials 多孔硅( ps )是近年来发展起来的一种新型硅基材料，具有与单晶硅材料大不相同的特性。
Specification for harmonized system of quality assessment for electronic components - blank detail specification - mos read write static memories silicon monolithic circuits 电子元器件用质量评估协调体系规范.空白详细规范. mos读写静态存贮器单晶硅电路
Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra - vacuum electron beam evaporator 首次采用超高真空电子束蒸发的方法在多孔硅上成功地外延出晶体质量和电学性能良好的单晶硅。
At present , the efficiency of the high - efficient monocrystal si solar cell made in laboratory has been over 24 % , but the process is complicated and the cost is expensive 而单晶硅电池，目前实验室的高效单晶硅太阳电池的效率已大于24 。但工艺复杂，成本较高。
London - listed renesola does producewafers , but focuses onmonocrystalline wafers which are less effectivethan the multicrystallineingots and wafers that ldk produces 在伦敦上市的浙江昱辉也生产硅片，但只是单晶硅硅片，这比江西赛维生产的多晶硅硅片和硅锭，光电转化率要低。
In particular , we analyze the temperature - dependent absorption associated with the 1 . 1 ev fundamental indirect band gap of single - crystal silicon . theoretically , a wide temperature range is possible 它具有测温范围广；单晶硅敏感材料制备、加工工艺成熟等优点，因此有较广泛的发展前景。
P - type silicon crystal plates have been adopted in the text , which are formed mask sio2 by heat - oxygenation . and figures are diverted by normal light etching technology 本文采用p型单晶硅片，由热氧化形成sio _ 2掩膜层，标准光刻工艺进行图形转移，用koh溶液湿法刻蚀制作倒四棱锥腐蚀坑列阵。
