双极晶体管

• Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - bipolar transistors for switching applications
  电子元器件质量评估协调体系.半导体分立器件.空白详细规范.开关电路用双极晶体管
• Bipolar transistors of the type of 3dd820 and 3dd15d ( with f2 metal - pack ) are taken as an example in the study to verify the method of controllable junction temperature
  以3dd820 , 3dd15d （ f2金属封装）双极晶体管为实验对象，对结温可控的晶体管稳态工作寿命试验方法进行了验证。
• Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification
  电子元器件用质量评估协调体系规范.空白详细规范.低频与高频放大用额定周围环境的双极晶体管
• Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for low - frequency amplification
  电子元器件质量评估的协调体系.半导体分立器件.空白详细规范.低频放大用外壳温度额定双极晶体管
• Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications
  电子元器件质量评估协调体系.半导体分立器件.空白详细规范.高频放大用外壳温度额定双极晶体管
• The results show that enhanced low - dose - rate sensitivity ( eldrs ) exists in both domestic and imported bipolar transistors , and the npn transistors are more obvious than pnp transistors
  结果表明：在辐照的剂量率范围内，无论是国产还是进口的双极晶体管，都有明显的低剂量率辐照损伤增强现象，且npn管比pnp管明显。
• Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification
  电子元器件质量评估的协调体系.半导体分立器件.空白详细规范.低频和高频放大用环境温度额定双极晶体管
• Radiation effects and annealing characteristics have been investigated on different type of domestic and / or imported bipolar operational amplifiers and transistors at five dose rates ranging from 100 to 0 . 0022rad ( si ) / s for the same total doses
  摘要对不同类型和型号的国产及进口双极晶体管和运算放大器的不同剂量率的辐照效应及退火特性进行了研究。
• This paper has designed a inverter power supply of volume 2kva , working frequency 20khz . , based on that has analyzed the characteristic of igbt ( insulated gate bipolar transistor ) . it was provided the working theory of dc voltage circuit and bridge type invert circuit
  本文在分析了igbt (绝缘栅双极晶体管)特性的基础上，设计了一台容量为2kva 、频率为20khz的高频逆变电源。
• In this paper , a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )
  本文采用最新的逆变思想与新型的开关器件?绝缘栅型双极晶体管( igbt ) ，研制出了移相式pwm软开关高压逆变电源。逆变技术发展至今，已经逐渐向大功率方向发展。