Based on the theory of glow discharge , the angle distribution of electron and the recombination process are simulated by adopting monte carlo method . the doping process of n - type diamond film is investigated by this method for the first time . the results indicate : 1 ) the scattering angle of electrons near the substrate is mainly lange - angle , which is helpful to grow diamond film over a large area when glow discharge is kept ; 2 ) after considering the recombination process , the number of particles distribution is provided 主要结果如下： ( 1 )研究了电子在雪崩碰撞和分解电离后的角分布情况，结果表明基片附近电子的散射以大角散射为主，在维持辉光放电的条件下，较高的偏压和工作气压对金刚石的横向连续成膜是有益的； ( 2 )考虑了低温合成金刚石薄膜过程中电子与各种碎片粒子的复合过程，给出了不同的复合系数情况下的粒子数分布，结果显示各种碎片粒子的分布随复合系数的变化会出现粒子数分布的涨落现象。
