According to the requirement of innovation engineering in chinese academy of sciences , the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon , and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon , including the microstructure , ciystallinity and surface morphology , has been studied systematically . it is found that the porous silicon and substrate have the same orientation and share a coherent boundary . but at the edge of pores , the lattice relaxes , which induces xrd peak moving of porous silicon Soi技术和多孔硅纳米发光技术研究是当今微电子与光电子研究领域的前沿课题，本文根据科学院创新工程研究工作的需要，开展了多孔硅外延层转移eltran - soi新材料制备与改性多孔硅发光性能的研究，获得的主要结果如下：系统研究了硅片掺杂浓度、掺杂类型和阳极氧化条件等因素对多孔硅结构、单晶性能和表面状态的影响，发现多孔硅与衬底并不是严格的四方畸变，在多孔硅/硅衬底的界面上，多孔硅的晶格与衬底完全一致，但在孔的边缘，多孔硅的晶格发生弛豫。
The intrinsic carrier concentration reduces when decreasing the v / iii ratio . the high quality of in0 . 53gao . 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs . when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0 . 2 um the mobility becomes the maximum and the carrier concentration is the lowest /比对外延层的表面形貌有较大影响，增大/比有利于提高材料的结晶质量；随着/比增加，迁移率升高；本征载流子浓度随着/比减少而降低； ash _ 3和ph _ 3转换时间在10秒到30秒之间可以获得质量较好的ingaas外延层；在inp缓冲层厚度为0 . 2 m时迁移率达到最大，载流子浓度达到最低。
The defect and interface in sapphire and gan were observed by afm . we found that when the dislocation density in sapphire was lower thanl05 / cm2 , the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire . the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4 , and the mo content in gan was lower than ppm . so it was concluded that low - cost mo crucible is viable 用扫描电镜( sem ) 、 xps 、电子探针和紫外荧光光谱仪测量了蓝宝石衬底和gan外延层中的mo杂质的含量，发现蓝宝石衬底中含有mo杂质，含量约为10 ~ ( - 4 ) (质量含量) ；而在外延层gan中没有检测到mo杂质，即mo杂质含量小于ppm级。
Many factors which affect the epitaxy qualities , especially the porosity of porous silicon and growth temperature , have been studied in detail . it is found that the pre - oxidation of porous silicon can efficiently prevent the boron diffusion during epitaxy . the defaults along { 111 } are the main defects in epitaxial silicon layer 深入研究了影响外延的各种因素，特别是多孔硅的孔隙率和外延温度对外延层质量的影响，发现多孔硅的预氧化可以有效地阻止外延时b的扩散，外延层中主要的缺陷是沿着{ 111 }面生长的层错。
Furthermore , the growth and the study of self - organized quantum dots structures become more and more important recently , and the application of self - organization technique become wider and wider in this thesis , we address the theory of film growth and the growth technique firstly more , the ways and characteristics of surface detection are prescribed we mainly report the growth process , results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd , in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures , including the substrate cleaning , nitridation , the growth of buffer and the growth of gan and ain epilayer , is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover , we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature , we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 ) 本论文主要论述了在espd - u装置上，采用电子回旋共振等离子体增强mocvd ( ecr - pamocvd )方法，在蓝宝石衬底上通过s - k模式自组装生长gan aln量子点结构的生长工艺、结果及讨论。而重点分析了自组装生长量子点之前的aln外延层生长工艺，包括衬底清洗、氮化、缓冲层的生长和gan 、 aln外延层的生长；通过高能电子衍射、 x射线衍射和原子力显微镜测试，并且对这些测试结果进行了详细的比较研究，得出了较优化的工艺条件，生长出了晶质较好、表面较平整的aln外延层；进而采用s - k模式自组装生长了gan aln量子点结构。由于实验装置加热炉温度的限制，我们没有能够生长出原子级平滑的aln外延层表面，因而没能够生长出密度比较大和直径比较小的量子点。
A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit . vertical pnp transistor whose base is epitaxy layer was used as output . the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact 在工艺中，采用了smart功率集成技术实现电路的大功率，基区是外延层的纵向pnp晶体管作为输出，将集电极置于芯片背面，采用低电阻率p ~ +衬底作为欧姆接触。
