The kinetic monte carlo method based on a solid - on - solid model has been introduced to simulate the insb heteroepitaxial growth . furthermore , transmission electron microscopy ( tem ) and hall measurements have been performed to study the interface structure and electrical properties of insb epilayers 在sos ( solid - on - solid )模型基础上采用动力学蒙特卡罗( kmc )方法模拟了insb薄膜的外延生长过程,同时采用透射电镜( tem )与霍尔( hall )测试方法研究了薄膜的界面结构与电学性能。
Due to great advantage of the excimer laser in photoelectron material , photoelectron technology research , so in this thesis , a xecl excimer laser is designed in order to solve some problem in semiconductor film , cmr film , quartz film and other kind of film application , optical etching field , interaction between laser and material , material plasma study . the parameters of the excimer laser is e also measured and analyzed 因此本文以气相沉积、外延生长、巨磁薄膜、金刚石及其它薄膜制备及后续的光刻，激光与物质的相互作用，等离子体研究为目的，研制获得了激光脉宽18ns ，单脉冲能量150mj ，矩形光斑大小2cm 1cm ，束散角3mrad ，最高重复频率5hz的xecl准分子激光器。
Once projected along [ 001 ] p or [ 0 - 11 ] sj , the planes ( 111 ) si and ( 110 ) p have early 4 ? angle as confirmed by hrem . we also show that no planes with low idices between the two lattices are parallel . therefore , epitaxy growth on ( 100 ) sj corresponding to ( 100 ) p ) , or ( 111 ) sl ( corresponding to ( 110 ) p ) would be very ifficult under the optimum orientation relationship because of the slight but efinitely present deviation angles 我们还了解到两种晶格间不存在完全平行的低指数晶面，当采用最佳取向外延生长时，无论是选择（ 111 ） s ； （与（ 110 ）肥配）或（ 100 ） s ； （与（ 100 ） p相匹配）都很困难，因为1 ） s ；与豆0 ）和o0o儿与o ）间总是有一定的转角，这就很容易形成界面台阶，恶化界面状况。
