Moreover , the effect of the transverse wave on the band gaps by changing the phononic crystals diameter 并通过仿真不同直径的声子晶体研究了横波对带隙的影响。
So it can reduce the light leaking loss of a 2 - d photonic crystal defect waveguide 本论文对空气桥结构光子晶体带隙限制光波导及其接续光波导的制作工艺进行了研究。
At last , a 31 ghz narrow band filter is designed as an application of the photonic crystal 由于光子晶体也属于一种周期结构,在分析其带隙结构时,可以借鉴前面的算法。
Measurement procedures for resolution and efficiency of wide - bandgap semiconductor detectors of ionizing radiation 离子辐射的宽能带隙半导体探测器的分辨和功效的测量规程
Tin sulfide ( sns ) has an optical band gap of 1 . 3ev , which is close to the optimal band gap 1 . 5ev Sns的光学直接带隙为1 . 3ev ,接近于太阳能电池材料的最佳禁带宽度1 . 5ev 。
Theoretical research on reflection and transmission performances of 2d dielectric ebg structures with different parameters 不同参量的二维介质电磁带隙的反射及传输特性研究
Zinc oxide ( zno ) is an important wide - band ( 3 . 37ev ) semiconductor with low dielectric constant Zno是一种重要的宽禁带(常温下为3 . 37ev )低介电常数的直接带隙半导体材料。
Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure 氧化锌( zno )是一种具有六方结构的?族宽带隙半导体材料，室温下带隙宽度高达3 . 3ev 。
The basis topologies for the band - gap , buried zener , and xfet references are shown in figures 1 , 2 , and 3 , respectively 关于带隙基准、掩埋齐纳二极管和xfet基准的基本拓扑如图1 、 2和3所示。
Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure 氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3 . 37ev 。
