2 for the first time , rf sputtering method and vapor doping method have been combined to prepare n type bn films . bn films doped with s are n type conductivity 掺s后的氮化硼薄膜表现出n型导电，未掺杂的氮化硼薄膜的电阻率1 . 8 1011 cm ，掺杂后的氮化硼薄膜的电阻率为7 . 3 107 cm 。
Some important conclusions obtained in our investigations were as follows : nanosized zirconia powders doped with rare earth ( re ) were successfully prepared using co - precipitation method 主要研究内容和实验中所得到的结论如下： 1采用共沉淀法成功地制备了稀土掺杂的二氧化锆纳米粉体。
0 . 4 absorbents are prepared by high - temperature solid - state reaction . the influence of doping potassium on the crystal structure of the prepared absorbents is studied by comparison of their xrd patterns 为反应物，采用高温固相合成法在k元素掺杂的情况下，制备了一系列可在高温460650下直接吸收co
In both of the two doped models , the calculation results show that their conductivity is higher than that of the non - doped model , while the seebeck coefficient and thermal conductivity are lower than the non - doped on e 两种掺杂模型的电导率都高于未掺杂的ca _ 3co _ 2o _ 6 ，而seebeck系数和热导率都降低。
Conformed by van der pauw hall measurement after annealing at 800 for 1h . this is the first experimental report of mg implantation on mg - doped gan and achieving p - type gan with high surface hole concentration 的p -型gan 。首次报道了实验上通过mg离子注入到mg生长掺杂的gan中并获得高的表面空穴载流子浓度。
In this thesis , we calculated the electrical and optical properties of - si3n4 and - si3n4 : c by the first principles calculation based on pwp . the main research work is divided into two parts 目前对氮化硅材料的电子结构和光学性质的第一性原理研究较少,特别是碳掺杂的氮化硅材料的第一性原理研究更少。
The optical properties of semiconductor nanoparticles doped with activator elements such as zns : mn2 + which was first prepared in 1993 led to a new stage of investigation of optical characteristics of nanoparticles 它们的光学性质和体材料相比有很大的变化，近年来半导体掺杂的纳米颗粒的光学性质引起了人们的重视。
4 ) the thz resistivity of doped zn0 . 95cd0 . 05te < 110 > crystals changes with different doping following the similar way as the dc resistivity , which results in different thz wave generation efficiency 对于有掺杂的zn吧人内。 p 11o单晶，通过不同掺杂可以改变zn95cd ste叫单晶的电阻率，从而改变样品产生thz辐射的效率。
The carrier mobility of the s doped n - type diamond had the same order as the s doped 1 b diamond and the changes of the character of diamond along with the changes of intensity of s doped in diamond were investigated 其中，采用cvd技术制备的以硫为施主的n型金刚石薄膜的迁移率与b单晶金刚石硫掺杂的迁移率达到了相同的量级。
In order to explore the zno - based material with a wider band gap , mgxzn1 - xo alloy thin films were fabricated by the sol - gel deposition method . and the structure and optical properties were also studied 为了探索波长更短的发光材料，我们采用溶胶凝胶方法制备出了mg2 +离子掺杂的mgxzn1 - xo合金薄膜，并系统地研究了它的结构和光学性质。
