That ’ s why the quality of the photodetector can ’ t be insured . according to the existing theory , the dark i - v characteristics and the i - v characteristics under illumination are simulated using matlab software and medici simulator 在现有理论基础上,利用matlab和medici软件,对gan基msm紫外探测器进行了仿真,获得了该器件的暗电流与稳态光照下电流的i - v关系曲线。
According the simulated results , the dark i - v curve is in agreement with the experimental date from literature , but the i - v curve under illumination doesn ’ t fit the experimental date from literature in the insaturation region 在使用现有理论的仿真结果中,获得的暗电流的i - v曲线与文献中实验数据一致,而稳态光照下i - v关系曲线与文献报道的实测结果在非饱和段不吻合。
The photoconductive uv detectors based on zno : al thin films , having a metal - semiconductor - metal ( msm ) structure with interdigital ( idt ) configuration , were fabricated by using au as a contact metal . the characteristics of dark and photocurrent of the uv detector and the uv photoresponse of the detector were investigated 同时, au和zno : al薄膜间已形成欧姆接触,无光照时,暗电流很小,当用= 350nm的光照射器件时,在6伏偏压时,光生电流为58 . 05 a 。
After measuring dark current , photocurrent and response to x pulse of gaas detector before and after 1 . 7 mev electronic radiation , the response tune , fall time of trailing edge , full width of half maximum ( fwhm ) , sensitivity , carrier life , mobility are researched and contrasted . the result shows that the response speed of detector , time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation . though sensitivity of the detector reduces , its measuring range can be widened 为了使探测器的性能得到进一步的提高，我们对其进行了电子辐照改性，并测量了本征砷化镓探测器和经过1 . 7mev电子辐照的探测器的暗电流、光电流及对x射线的脉冲响应，并对其响应时间，后沿下降时间，半高宽( fwhm ) ，载流子寿命，灵敏度进行对比，研究，结果显示经电子辐照后的探测器的性能得到了改善，使响应速度，分辩率进一步提高，并消除了探测器输出信号后沿的非线性，虽灵敏度有所降低，反而使其测量范围得以拓宽。
In this thesis we have analyzed some kinds of single photon detector and their advantage and disadvantage firstly . then , the key apparatus ( ingaas - apd ) and its characteristics have been studied . we have tested the apds of perkinelmer , oki and photon company , and got some useful parameters 其次，主要对量子通信用单光子探测器的核心器件? ? ingaas雪崩光电二极管( ingaas - apd )的暗电流特性、光电流、温度特性、雪崩特性等进行了研究，同时把飞通公司、 oki公司、 perkinelmer公司的apd进行了比较，分别得出了它们的特性参数，为研制实用的红外单光子探测器提供了重要的依据。
The paper analyzes in detail the mechanics and optics theory . in the light of the characteristic of the intensity modulation optical fiber sensor , the reference - way is presented to compensate the error signals which are caused by the bias light , dark current of photoelectric detector , temperature drift of pre - amplifier 文中详细分析了这种传感器的力学和光学工作原理，并且针对所选用的强度调制型光纤传感器的工作特点，提出采用参考通道补偿由于背景光、光电探测器的暗电流、前置放大器温漂等因素引起的误差。
In the design of optical system , to improve system precision , the fiber optic coupler is added to make a laser pulse circle ; in the unit of photo detection , we make a high - precision temperature compensation apd bias circuit , which allows system to abate the noise caused by temperature changer and dark current 应变测量系统主要由光源、传感光纤、光电探测器和信号处理电路组成。在光学系统设计中为提高系统的精度采用了光纤定向耦合器实现光脉冲的循环；在光电转换单元上采用高精度温度补偿的apd偏置电路，减小了温度和暗电流带来的噪声干扰。
In order to overcome the three main limitations of the conventional gaas / algaas qwips , small photocurrent , high dark current and hence high noise , and low response speed , the novel mechanism of qwips that photocurrent increases step by step with the well number ' s increasing was proposed by professor shen 针对常规gaas algaas量子阱红外探测器存在的光电流小、暗电流大、响应速度低等问题，沈光地教授提出了新型光电流逐级增强gaas algaas量子阱红外探测机制。
At last , a buried - channel ccd ( bccd ) is simulated by the developed software . the influences of some parameters such as the gate length , the gap width between the gates and the depth of the channel to the performance as charge handling capacity and charge transfer efficiency of the bccd are discussed . and the dark current is also analyzed 最后利用该软件实际模拟了电注入的埋沟ccd器件，详细讨论了栅长，栅间隙宽度和埋沟深度等参数对该结构ccd的电荷容量和转移效率的影响，同时，还分析了少子寿命对暗电流的影响。
