This thesis overall views the historical development , future trend , active devices . sensitivity definitions and configurations of microwave and millimeter mixers , and then discuss several kinds of mixers and mixer diodes 本文系统地介绍了微波毫米波混频器的发展概况和今后的发展趋势、实现混频器的有源器件及其封装形式以及利用它们实现混频的优缺点。
By improving the process technologies , si - based active devices , for example , mosfet ' s and bjt ' s et al , demonstrate an extremely high f , f and fmax , which is sufficient for radio frequency ( rf ) / microwave applications 对硅基有源器件，如mosfet ’ s和bjt ’ s等，通过改进工艺技术，可以得到很高的特征频率f _ t和振荡频率f _ ( max )性能，能够满足射频微波应用的要求。
Using current controlled conveyors , the designs of active components , function circuits , filters and oscillators have been systematically presented in this paper . the circuits are not only easy to integrated , but also adaptable 本文系统归纳和提出了以电流控制传送器为积木部件设计有源器件、运算器件、滤波器和振荡器的方法,所设计的电路不但易于集成,而且具有输出可调的特性。
Based on these theories , this paper discusses the method of design of the rectangular gunn integrated active microstrip patch antenna in detail . the size of the active antenna and the location of the device in the antenna is obtained at the specified operation frequency 根据这些理论，详细讨论了一种集成gunn二极管的矩形有源微带贴片天线的设计，得到了在给定的工作频率下的有源天线尺寸和有源器件的位置。
With the kind of design of 0 . 5 - 6ghz wlna , a new type of amplifier with on / off function , based on sige device , is presented , which is improved by adopting parasitic parameter with sige hit - kit 0 . 35 m bicmos process . at present simulation is finished successfully , and the amplifier is coming to be commercialized 论文提出了具有开关功能的低功耗sige双极器件的新型放大器和利用寄生电感来设计电路的新思路,同时在工艺上采用sigehit - kit0 . 35 mbicmos工艺来制作平面电感和有源器件,成功完成了0 . 5 - 6ghz微波宽带低噪声放大器的前期仿真和设计工作。
The dominance and properties of the cmos integrated reference were also described , and the research meaning was pointed out . related device theory and process model used in design were described . the temperature related model and the influencing factor of two active devices , subthreshold mosfet and pnp substrate transistor , based on cmos process were analyzed and compared , and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference 阐述了设计中相关的器件理论与工艺模型,对cmos工艺下的两种有源器件,即亚阈值工作状态下的金属场效应晶体管( mosfet )及衬底pnp双极型晶体管( bjt )的温度模型及其影响因素进行了分析和比较,指明衬底pnp双极型晶体管更适合作为基准源的温度补偿元件。
5 、 through the structural parameters of the sige hbt , associating the passive devices , the layout of the monolithic integrated circuit lna is obtained , and the technology of the circuit and the vital process process are introduced . through the analysis and the design of sige hbt , two solutions of the base 重点是通过对sigehbt分析和研究,提出了解决基区外扩现象的两种方案,同时在工艺上应用sigehit - kit0 . 35 mbicmos新工艺来制作平面电感、电容、电阻和有源器件。
And the general procedures of these methods are summarized . finally , some practical problems are analyzed using fdtd , which include passive linear resistor element and nonlinear diode element in the microwave circuits and an integrated antenna embedded with an active gunn diode element and a dielectric cavity resonator 最后，本文通过编程模拟了微波电路中的无源线性器件电阻和非线性器件二极管，含有有源器件gunn二极管的有源集成微带天线以及介质腔谐振器等具体实例，来验证各种方法的可行性和有效性，计算结果与实验结果吻合。
Round - the - world company is had at present exceed clean workshop ( 10 thousand class ) , introduce product line of several broadbands equipment and parts of an apparatus of several smooth active to enclose a line to reach by abroad of all kinds detect with what accuse at pledging equipment , have produce per year parts of an apparatus of photoelectricity of of all kinds broadband tens of 10 thousand productivity , the product supplies overseas market demand for the most part 环球公司目前拥有超洁净厂房（万级） ，并由国外引进数条宽带设备生产线和数条光有源器件封装线及各类用于质控的检测设备，具有年产各类宽带光电器件数十万只的生产能力，产品大部分供应海外市场需求。
Coplanar waveguides ( cpw ' s ) offer several advantages over conventional microstrips , these include the simplification of the circuit fabrication process , ease of parallel and series insertion of both active and passive components ( without the need for via holes ) , and high circuit density . therefore cpw ' s are widely used in microwave and millimeter - wave integrated circuits , optical and high temperature superconductor microwave devices 与常规的微带传输线相比，共面波导具有容易制作，容易实现无源、有源器件在微波电路中的串联和并联(不需要在基片上穿孔) ，容易提高电路密度等优点，因此共面波导被广泛应用于微波、毫米波、光学和高温超导等集成电路中。
