By studying the luminescence mechanism and the optical spectra , the two reasons for the diminish of light yield are given : the absorption of the fluorescence by the point defects when that produced and the scatter of the fluorescence by the macroscopic defects when that transmitting . in ce : yap scintillators , the available approach to improve the light yield is to diminish the self - absorption of the point defects 通过光谱分析和对发光机制的研究，指出在产生荧光辐射过程时晶体中的点缺陷对荧光的吸收以及荧光收集过程中宏观缺陷对荧光的散射是造成晶体光产额减小的原因，通过减小晶格缺陷是提高晶体光产额的有效途径。
The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects , including native point defects ( vacancies , interstitials , antisites , and complexes ) , extended defects ( all types of dislocations , grain boundaries , precipitates , melt spots , etc . ) , and undesired impurities Hg _ ( 1 - x ) mn _ xte晶体的电学性能受缺陷的影响很大。晶体的缺陷主要有：原生点缺陷(空位、间隙原子、反位原子和复合体) 、扩散缺陷(各种位错、晶界、沉淀相、低熔点相等)以及一些杂质。
In this article , low temperature photoluminescence measurements have been performed on as - irradiated and postannealed n - type 6h - sic , the postannealing temperature is up to 1650 ? . three sharp lines at 478 ^ 483 . 3 and 486 . 1nm respectively were observed for the first time in the as - irradiated samples and argued to be due to vacancy - like induced by irradiation 对经辐照后未退火的n型样品的低温光致发光实验中，首次观察到三条尖锐的谱线，分别位于478 . 6 、 483 . 3和486 . 1nm位置，该系列谱线可能与辐照诱生的点缺陷有关。
In undoped lec si - gaas single crystal , the density of dislocation is usually very high and the dislocations easily form the cellular structure . the formation and distribution of other impurities and point defects are closely correlative with the cell structure and then result in the non - uniformity distribution of electrical and optical characteristic of gaas material 而非掺lecsi - gaas中的高密度位错，往往形成胞状结构；其它杂质和点缺陷的形成与分布与该结构密切相关，并导致gaas材料电学和光学特性的不均匀。
In this paper , the relationship of the thermal donor with point defects was investigated by injection of different concentration and distribution vacancy via 1250 ? , rtp preannealing in different gases ( n2 o2 , ar ) . the influence of rtf preannealing on generation at 450 ? and annihilation at 650 ? of thermal donors ( td ' s ) was not detected 本论文通过不同气氛( n _ 2 , o _ 2 , ar ) 1250 30s高温rtp预处理在硅片中引入不同浓度和分布的空位，进而用四探针和扩展电阻研究450不同时间热施主的生成特性和650热施主的消除特性，从而确定热施主和点缺陷之间的关系。
We consider that the complexes of bmon ( m , n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling . therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation 在实验事实的基础上，我们认为在重掺硼硅单晶生长过程中， bmon ( m , n 1 )复合体或掺b引起的点缺陷能在晶体冷却过程中的较高温度阶段形成，且在随后的退火过程中能稳定存在，作为氧沉淀形核的核心，从而促进了氧沉淀，减小了大直径硅单晶中void缺陷的尺寸，增加其密度。
