By carefully checking the leed pattern , it is found that the " ( 2x2 ) " pattem is actually a combination of the c ( 2 x 2 ) reconstruction from the ersi , island surfaces and the ( 2x l ) reconstruction from the bare si substrae 对（ x2 ）再构的低能电子衍射的仔细研究表明，实验中观察到的px2 ）再构实际上是来自于饵硅化物的叶x2 ）再构与来自硅表面的cxi八门2 ）再构的迭加产物。
In this paper , ni - salicide process has been investigated intensively for the application to deep sub - micron coms devices . with the size of devices scaling , ni - salicide is more suitable for cmos devices than ti - salicide or co - salicide by improving salicide process 随着器件尺寸的进一步缩减，与传统的ti 、 co自对准硅化物相比， ni自对准硅化物更能适用于cmos器件对硅化物的要求。
Annealing of the er - covered si ( 00l ) surfaces to 600 oc results in the emergence of a new component with a 1 . 2 ev energy shift towards lower binding energy in the si 2p core level spectrum , which is indicative of the presence of some sort of er silicides 同时，当覆盖了铒的样品被退火至600 ，在硅2p3 / 2芯能级峰的低结合能端约1 2ev处出现了一个新的峰，并被确认为来自于铒硅化物。
Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis . we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics 硅化物主要是由沉积过微溯博士裕文搏要程中hf和出的互扩散引起的，而热氧化可以将其转化成具有较高介电常数的硅氧化物hfxsiyo 。
( 3 ) the analysis results of xrd , sem indicated that the ni - pd coating formed a fcc structure . after annealing at 200 ? , a little amount of pdsi was precipitated in the coating . the surface image of ni - pd coating was utricle ( 3 )利用xrd 、 sem 、 aes等手段对ni - pd合金镀层的结构、表面形貌、成分进行了分析，结果表明ni - pd合金镀层形成了面心立方的固溶体结构，镀层经过200快速退火后，有少量pd的硅化物( pdsi )析出。
The annealing also changes the grain morphology . the p grains from the amorphous layer are finer than in the other cases . silicide grains grow towards the substrate at high annealing temperature and finally shrink into isolated islands , thus deteriorating the silicide / si interface smoothness 由于非晶的形成，使得退火后晶粒要经重新形核和长大的过程，所以在同样的退火条件下，与未形成非晶的样品比，硅化物颗粒要小。
The buried layers moves towards sample surface , forming surface layers . the implantation - damaged zone also moves towards the surface and is recovered gradually . the fe - implanted films were implanted , or doped , with small amount of carbon for improving the film quality 另外随退火温度变化的还有注入损伤层，随退火温度的升高注入损伤逐渐恢复，损伤层厚度逐渐减小，到850的时候硅化物层断裂，损伤层则上升到样品表面。
