Due to its intrinsic merits , such as wide band gap , high electron saturated drift velocity , high melting point , good coefficient of thermal conductivity , anti - radiation and good chemical stability , gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature , high frequency and high power electronic devices Gan是直接带隙半导体材料，以其禁带宽度大、电子饱和漂移速度大、熔点高、热导率高、抗辐射能力强和化学稳定性好等优点成为制造短波长光发射器件及高温、高频、大功率电子器件的理想材料。
