On the one hand , it can solve the problem of multiplicity of solutions efficiently ; on the other hand , it applies to all kinds of transmission spectra and does n ' t rely on the existence of fringe patterns or transparency 一方面，它很好地解决了解的多值性问题；另一方面，它不依赖于干涉条纹及透明区的存在，可以利用所有的光谱测量数据，因而适合于处理各种不同的透射光谱。
A new method of simultaneous determination the multi - parameters by use of transmission spectra and simulated annealing algorithm has been presented . thin film parameters were obtained by solving the equations in inversion method from experimental transmission data 提出了一种用透射光谱和模拟退火算法一次性同时确定薄膜多个参数的新方法，该方法是根据所测的光谱数据，通过解联立方程组来反演计算出薄膜参数的。
Under the applied voltage of 2v , the duration of colored process and bleaching process of the semisolid - state smart window was 2s and 1 . 5s respectively , which denoted rapid response velocities . researches on the glass / ito / wo3 / linbo3 / niox / au all solid - state smart window were referred to the effect of each film ' s thickness on the device ' s electrochromic properties . through the test of the visible light transmittance of the colored state and bleaching state of the device , it proved good electrochromic capabilities with the dynamic optical density changed between 0 . 2 - 0 . 5 并在此基础上继续研究了glass ito wo _ 3 linbo _ 3 nio _ x au结构的全固态智能窗器件模型，对于各薄膜层厚度对于器件电致变色性能的影响做了初步的研究，测试了器件可见光范围内的着色褪色透射光谱，光密度变化量在0 . 2 0 . 5范围内，表明器件具有良好的电致变色性能。
The transmission spectra and reflectance spectra of the pc shift systematically with the spheres size , providing evidence of photonic crystal effects . photoluminescence measurements show efficient emission of the zno photonic crystals in the uv as well as a defect emission band at longer wavelength 利用透射光谱及反射光谱研究了影响zno光子晶体的光子禁带的工艺参数;利用x射线衍射仪分析了zno光子晶体的结晶和取向性能;利用荧光分光光度计,研究了不同前处理温度下的zno光子晶体的光致发光谱。
The shimadzu uv - 3101 spectrophotometer was employed to get the uv - visible transmission and reflection spectra . both of the absorption coefficient ( a ) and optical band gap ( eg ) were calculated from the transmission and reflection spectra of the films . it was observed that eg decreased with an increase in the deposition pressure 采用紫外-可见光分光光度计测定了纳米- sic薄膜透射光谱和反射光谱，并通过样品的透射光谱和反射光谱计算了纳米- sic薄膜吸收吸收系数和光学带隙eto实验结果表明，增大工作气压导致纳米- sic薄膜的光学带隙的减小。
Using the microwave selective heating property for materials , by setup equivalent equation , and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd , three temperature distribution modes were established , including temperature distribution comprehensive mode of inhomogeneous plasma , temperature distribution composite mode of composite substrate materials , temperature distribution perturbation mode of composite materials , which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate . and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter . as an important part , this thesis researched the nucleation and growth of diamond films in mpcvd , systematically researched the effects of substrate pretreatment , methane concentration , deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd , characterized the films qualities in laser raman spectra ( raman ) , x - ray diffraction ( xrd ) , scanning electron microscopy ( sem ) , infrared transmission spectra ( ir ) , atomic force microscopy ( afm ) , determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system 该系统可通过沉积参数的精确控制，以控制沉积过程，减少金刚石膜生长过程中的缺陷，并采用光纤光谱仪检测分析等离子体的可见光光谱以监测微波等离体化学气相沉积过程；利用微波对材料的选择加热特性，通过构造等效方程，并首次将电磁场摄动理论引入到mpcvd的基片加热材料的设计中，建立了非均匀等离子体温度场综合模型、复合介质基片材料的复合温度场模型及复合介质材料温度场摄动模型，为mpcvd的基片加热系统设计提供了一条全新的技术路线以指导基片加热材料的制备，并对基片加热材料进行了设计和优选，以获取大面积均匀的温度场区，甚至获得大于基片台尺寸的均匀温度区；作为研究重点之一，开展了微波等离体化学气相沉积金刚石的成核与生长研究，系统地研究了在( 100 )单晶硅基片上mpcvd沉积金刚石膜的实验过程中，基片预处理、甲烷浓度、沉积气压、基体温度等不同实验工艺参数对金刚石薄膜质量的影响，分别用raman光谱、 x射线衍射( xrd ) 、扫描电镜( sem ) 、红外透射光谱( ir ) 、原子力显微镜( afm )对薄膜进行了表征，确立了该系统上mpcvd金刚石膜的最佳的实验工艺参数。
The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films . in the paper , ch and si - hn of a - si : h films , fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method , have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting . the effects of ratio of h2 / sih4 on ch and si - hn are studied Fourier红外透射( ftir )谱是研究氢化非晶硅( a - si : h )薄膜中氢含量( c _ h )及硅-氢键合模式( si - h _ n )最有效的手段，对于微波等离子体化学气相沉积( mwecrcvd )方法在不同h _ 2 sih _ 4稀释比下制备出的氢化非晶硅薄膜，我们通过红外透射光谱的基线拟合、高斯拟合分析，得出了薄膜中的氢含量，硅氢键合方式及其组分，并分析了这些参数随h _ 2 sih _ 4稀释比变化的规律。
Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process . the films were characterized by fourier transform infrared ( ftir ) spectroscopy . the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step . the absorption coefficient was calculated from te ( ) and re ( ) . the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg 本文还研究了立方相含量与光学带隙的关系，在n型si ( 111 )片和熔融石英片上沉积出不同体积分数的立方氮化硼薄膜，薄膜的成分由傅立叶红外吸收谱标识；用紫外-可见分光光度计测量了沉积在石英片上的bn薄膜的透射光谱te ( )和反射光谱re ( ) ，薄膜的厚度用台阶仪测得。
Base on two - stage approach , we adjust experimental parameter to develop a new method ( three - stage approach ) to prepare c - bn thin films . the study proves that it is favorable to prepare bn thin films of high cubic phase content . depositing time and substrate bias voltage in the first stage are 5 min and - 180v respectively 根据si片上bn薄膜的反射光谱r ( )和熔融石英片上bn薄膜的反射光谱r ( )和透射光谱t ( )各自独立的计算了bn薄膜的光学带隙,利用两种方法分别计算立方相含量均约为55 %的bn薄膜的禁带宽度为5 . 38ev和5 . 4ev ,其结果均和由经验公式计算得到的结果非常接近。
To find the parameters of preparation and annealing process associated with the best electrochromic properties of these films , following researches and experiments were carried out : to compare the visible light transmittance of the colored state with bleaching state of the electrochromic films which were annealed at different temperatures and for different duration , to count the dynamic optical density change , and to test the i - v relations of these films " electrochromic cycles and their colored / bleaching response time 对经过不同热处理温度和不同热处理持续时间得到的薄膜样品的着色褪色可见光范围内透射光谱的比较，计算薄膜动态光密度变化量的大小，测试薄膜着色褪色循环伏-安关系以及薄膜着色褪色响应时间的快慢，寻求到薄膜呈现最佳电致变色性能时所对应的制备参数与热处理参数。
