The sims , ir and raman analysis results show that the tritium permeation barrier ( tpb ) is formed when tic and sio2 films are annealed in hydrogen at about 350 ? 利用二次离子质谱( sims ) 、红外吸收光谱( ir )及激光喇曼光谱( raman )技术，证实了tic和sio2在350左右的氢中退火可形成防氚渗透阻挡层。
A novel barrier ( sion ) prepared by implanting nitrogen into silicon dioxide and the novel two - layer barrier ( ta and sion ) prove to be very effective on avoiding copper diffusion from the xps and aes results 通过xps和aes分析新型的扩散阻挡层sion及ta和sion双层结构的扩散阻挡层，结果显示两种扩散阻挡层可以有效的防止铜向sio2层的扩散。
