单晶膜的英文

• single crystal film
• single-crystal diaphragm

• "单晶"英文翻译    single crystal; monocrystal; ...
• "膜"英文翻译    membrane
• "晶膜" 英文翻译 :    epitaxial
• "单晶" 英文翻译 :    [晶体学] single crystal; monocrystal; unit crystal
• "非晶膜" 英文翻译 :    amorphous film
• "晶膜层" 英文翻译 :    hyaline layer
• "混晶膜电极" 英文翻译 :    mixed crystal membrane electrode
• "晶膜薄膜" 英文翻译 :    epitaxial film
• "晶膜电晶体" 英文翻译 :    epitaxial transistor
• "晶膜过程" 英文翻译 :    epitaxial process
• "晶膜设备" 英文翻译 :    epitaxial device
• "晶膜增长率" 英文翻译 :    epitaxial-growth rate
• "外延多晶膜" 英文翻译 :    epitaxial polycrystalline film
• "晶膜增长过程" 英文翻译 :    epitaxial growth mesa process
• "紫水晶膜杆菌" 英文翻译 :    bacillus membranaceus amethystinus
• "超单晶" 英文翻译 :    superindividual
• "单晶棒" 英文翻译 :    single crystal bar
• "单晶层" 英文翻译 :    single crystalline layer
• "单晶的" 英文翻译 :    mono-crystalline=monocrystalline; single-crystal
• "单晶锭" 英文翻译 :    single crystal ingot; single crystal rod
• "单晶硅" 英文翻译 :    monocrystal line silicon; monocrystal silicon; monocrystalline silicon; silicon single crystal; single crystal silicon; single-crystal silicon
• "单晶炉" 英文翻译 :    elemental crystal furnace; mono-crystal furnace; single crystal furnace; single-crystal furnace
• "单晶片" 英文翻译 :    microcontroller
• "单晶掐" 英文翻译 :    single crystal device
• "单晶丝" 英文翻译 :    monocrystalline wire; single crystal filament

• All of the results implied that the ecr - pemocvd had an excellent advantage in deposition of gan film or other films which otherwise should be synthesized in high temperature
  这说明了ecr - pemocvd法具有在低温下生长gan单晶膜中的优势。
• Moke and fmr studies were performed on epitaxial single crystalline fe ph . d thesis ; investigations of magnetic properties on magnetic thin , ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ) . the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy , and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films . it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
  对于外延生长在inas衬底上、厚度为8 - 25ml的超薄fe单晶膜进行了铁磁共振和磁光研究，获得以下几点结果： ( 1 )膜厚在8 - 25ml之间时，薄膜面内的磁晶各向异性为四度对称各向异性，垂直单轴各向异性比同厚度的fe gaas系统小许多，而立方各向异性则比fe gaas系统更接近bcc结构的fe 。

• 单晶膜的日语：たんけっしょうまく