技术，工艺的英文

• technology

• "技术"英文翻译    technology; skill; technique ...
• "工艺"英文翻译    technology; craft; industria ...
• "工艺，工艺学技术" 英文翻译 :    technology
• "工程；设计；技术；工艺" 英文翻译 :    engineering
• "工艺的；技术的" 英文翻译 :    technological
• "工艺技术" 英文翻译 :    process engineering; process technology; verfahrenstechnik
• "技术[工艺]分析。" 英文翻译 :    technical analysis
• "技术；工艺学" 英文翻译 :    technology
• "技术工艺品" 英文翻译 :    technological craft
• "电子工艺技术" 英文翻译 :    electronics process technology
• "仿金工艺技术" 英文翻译 :    gold-imitation proce ing technology; gold-imitation processing technology
• "工艺分析技术" 英文翻译 :    process analytical technology
• "技术的工艺的" 英文翻译 :    techincal
• "技术工艺新闻" 英文翻译 :    tyehnik tyehnologiyn medee; tyehnik, tyehnologiyn medee
• "技术工艺因素" 英文翻译 :    technological factor
• "技术工艺知识" 英文翻译 :    technical know-how
• "位片工艺技术" 英文翻译 :    bit slice technology
• "新技术新工艺" 英文翻译 :    new technology & new process
• "钻井工艺技术" 英文翻译 :    drilling technology
• "最新工艺技术" 英文翻译 :    later technology
• "工艺发展, 技术开发" 英文翻译 :    technological development
• "工艺革新, 技术革新" 英文翻译 :    technological innovation
• "工艺技术博物馆" 英文翻译 :    les musées techniques
• "工艺技术熟练工人" 英文翻译 :    technologically skilled manpower
• "工艺技术员（电子行业）" 英文翻译 :    electronic - technician

• To handle the process problems in production
  解决日常生产过程中出现的技术，工艺问题
• At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency
  在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。