晶格损伤的英文

• lattice damage

• "晶格"英文翻译    crystal lattice; lattice; sp ...
• "损伤"英文翻译    harm; damage; injure; lesion ...
• "价格损失" 英文翻译 :    price loss
• "人格损毁" 英文翻译 :    character assassination
• "晶格" 英文翻译 :    [物理学] crystal lattice; [晶体学] lattice; space lattice; crystalline host lattice 面心晶格 face-centred lattice; 体心晶格 body-centred lattice; 晶格场 crystal field; 晶格放大 lattice amplification; 晶格结构 lattice structure; 晶格理论 lattice theory; 晶格象 lattice image
• "损伤" 英文翻译 :    1.(伤害) harm; damage; injure; lesion; scuff; hurt; damnify; impair 辐射损伤恢复 healing of radiation damage; 船抵达时舷墙已受了损伤。 the ship arrived with damage to bulwards. 不要损伤大家的积极性。 don't dampen the enthusiasm of the masses. 这场大病损伤了他的体力。 this severe bout of illness has done serious damage to his health. 羊毛用热水洗往往会受到损伤。 wool usually damages if washed in hot water.2.(损失) loss; cause loss to 损伤兵力 reduce military strength; 损伤感受器 nociceptor; 损伤茧 piques; 损伤率 damage ratio; 损伤探测 fault localization; 损伤危险标准 [环] damage risk criterion; 损伤应力 damaging stress; 损伤阈值 damage threshold
• "晶格，结晶格子" 英文翻译 :    crystal lattice
• "子晶格；亚晶格" 英文翻译 :    sublattice
• "α晶格" 英文翻译 :    alpha lattice
• "超晶格" 英文翻译 :    superlattice
• "大晶格" 英文翻译 :    macrolattice
• "倒晶格" 英文翻译 :    reciprocal lattice
• "点晶格" 英文翻译 :    point lattice
• "格子；晶格" 英文翻译 :    lattice
• "硅晶格" 英文翻译 :    silicon lattice
• "价晶格" 英文翻译 :    valence crystal; valencecrystal
• "晶格，点阵" 英文翻译 :    lattice
• "晶格波" 英文翻译 :    lattice wave
• "晶格层" 英文翻译 :    lattice layer
• "晶格场" 英文翻译 :    lattice field
• "晶格点" 英文翻译 :    lattice point; lattice site; lattice-site
• "晶格化" 英文翻译 :    crystallize
• "晶格力" 英文翻译 :    lattice force
• "晶格链" 英文翻译 :    lattice chain
• "晶格面" 英文翻译 :    grate plane; lattice face; lattice plane; latticepiston

• In addition , integrated circuits and semiconductor devices are generally made with single - side polished wafers , therefore the results of this work indicate that nanocavity - gettering technique is practical in manufacture of devices . finally , the gettering uniformity is demonstrated directly on samples . the gettering results of au to oxygen intrinsic precipitation and to the nanocavity formed by helium ion implantation were compared and discussed in this paper
  本文还对实验样品中存在的氧沉积、晶格损伤对金杂质的吸除效果，与注氦诱生微孔的吸杂效果进行了比较和讨论，进一步证实了注氦诱生微孔吸除金杂质的均匀性，并加深了对微孔吸除机理的理解。
• Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature , in the range of the annealing temperature from 650 ? to 850 ? , which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing . furthermore , the square carrier concentration decreased , and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature . these results indicated that the second phase such as mnga , mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature , so the mn + ions which can provide carriers decreased
  由实验结果可以知道在退火温度为650 850范围内，样品的载流子迁移率随着退火温度的提高呈上升趋势，说明杂质元素的注入对样品造成晶格损伤，但退火对这些损伤具有修复作用；此外，随着退火温度的上升，样品的方块载流子浓度不断下降，加c样品的方块电阻不断上升，这都是因为随着退火温度的提高，掺入的mn ~ +离子不再提供载流子，而是形成了mnga 、 mnas等磁性第二相。