硅集成电路的英文

• silicon integrated circuit

• "硅"英文翻译    silicon
• "集成电路"英文翻译    integrated circuit; unicircu ...
• "硅集成电路棒" 英文翻译 :    silicon integrated circuit bar
• "大圆片硅集成电路" 英文翻译 :    wafer silicon integration
• "硅集成电路布图" 英文翻译 :    silicon layout
• "蓝宝石上硅集成电路" 英文翻译 :    silicon on sapphire integrated circuit; sosic
• "cad集成电路" 英文翻译 :    cad integrate circuit
• "cmos集成电路" 英文翻译 :    cmos integrated circuit
• "mos集成电路" 英文翻译 :    metal-oxide-semiconductor integrated circuit; mos integrated circuit
• "半集成电路" 英文翻译 :    semi-integrated circuit; semiconductor integrated circuit
• "磁集成电路" 英文翻译 :    magnetic integrated circuit
• "光集成电路" 英文翻译 :    optic integrated circuit
• "集成电路" 英文翻译 :    [电子学] integrated circuit (ic); unicircuit; molectron; integrated semiconductor; monolithic circuit◇集成电路放大器 integrated amplifier; 集成电路晶体管 integrated circuit transistor; 集成电路块 integrated circuit block
• "集成电路6" 英文翻译 :    ic integrated circuit
• "集成电路板" 英文翻译 :    integrated circuit plate
• "集成电路崩" 英文翻译 :    ic chip
• "集成电路卡" 英文翻译 :    card, integrated circuit; integrated circuit card; integrated-circuit card
• "集成电路块" 英文翻译 :    chip; integrated circuit block
• "集成电路片" 英文翻译 :    ic chip; integrated circuit chip
• "膜集成电路" 英文翻译 :    fic; thick film integrated circuit
• "全集成电路" 英文翻译 :    completely inegrated circuit; completely intergrated circuits; completelyinegratedcircuit; completelyintergratedcircuits
• "双集成电路" 英文翻译 :    dual integrated circuit
• "行集成电路" 英文翻译 :    line integrated circuit
• "集成电路设备；集成电路元件。" 英文翻译 :    integrated circuitry
• "薄膜集成电路" 英文翻译 :    fic film integrated circuit; thin film integrated circuit; thin-film integrated circuit

• Technology and development trend of si ic
  硅集成电路技术及发展趋势
• By studying and using conventional 1c process in combination with electron beam lithography ( ebl ) , reactive ion etching ( rie ) and lift - off process , several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires , si quantum dots , double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes
  研究利用常规的硅集成电路工艺技术结合电子束光刻，反应离子刻蚀和剥离等技术制备半导体和金属纳米结构，很好地解决了普通光刻与电子束光刻的匹配问题，提高了加工效率，经过多次的工艺实验，摸索出一套制备纳米结构的工艺方法，首次用电子束光刻，反应离子刻蚀和剥离等技术制备出了多种纳米结构(硅量子线、量子点，双量子点和三叉指状的金属栅结构) 。
• A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented . the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors . the substrate pn junction can be realized in standard silicon technologies without additional processing steps
  提出了一种新的方法来减小硅衬底损耗提高集成电感的q值：在硅衬底形成间隔的pn结隔离以阻止涡流减少损耗，这种方法工艺简单且与常规硅集成电路工艺兼容。