空位缺陷的英文
发音:
"空位缺陷"怎么读用"空位缺陷"造句
英文翻译手机版
- vacancy defect
- "空位"英文翻译 a vacant or unoccupied seat; ...
- "缺陷"英文翻译 defect; flaw
- "间隙空位缺陷" 英文翻译 : interstitial vacancy defect
- "填隙空位缺陷" 英文翻译 : interstitial vacancy defect
- "位缺陷" 英文翻译 : site defect
- "反位缺陷" 英文翻译 : antisite defect
- "移位缺陷" 英文翻译 : sift defect
- "肢复位缺陷" 英文翻译 : limb reduction defects
- "百单位缺陷比" 英文翻译 : defects per hundred unit
- "每百单位缺陷数" 英文翻译 : dphu: defect(s) per hundred unit
- "每百万单位缺陷机会" 英文翻译 : dpmo: defect(s) per million opportunity
- "每一单位缺陷数控制图" 英文翻译 : defect per unit chart
- "空位" 英文翻译 : 1.(空着的位子) a vacant or unoccupied seat; void; vacancy 他的去世留下了这个空位。 his death has left the void. 这有一个空位。here is an unoccupied seat.2.[固体物理] [物理学] [半] vacancy; bit bare; dummy bit; spare space; vacant site; void
- "空位串, 空位行" 英文翻译 : null bit string
- "单位缺点数" 英文翻译 : defects per unit; dpu
- "高位缺损" 英文翻译 : high defect; high positioned defect
- "缺陷" 英文翻译 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
- "钡空位" 英文翻译 : barium vacancy
- "单空位" 英文翻译 : monovacancy; single vacancy
- "空格;空位" 英文翻译 : empty bay
- "空位比" 英文翻译 : voids ratio
- "空位簇" 英文翻译 : vacancy cluster
- "空位带" 英文翻译 : vacancy bands
- "空位的" 英文翻译 : vacant
- "空位对" 英文翻译 : coupled vacancy; interstitial-vacancy pair; vacancy pair
例句与用法
- It is found that the pl spectra of al - si - sio2 films are composed of 3 bands located at about 370nm , 410nm , and 510nm , respectively . the peak position changes little with the different amount of al , while the intensity of the pl peak changes
Ple结果表明, 37onm和410nm的pl ,峰与样品中的氧空位缺陷有关,而510nm的pl峰则是由于铝的掺入改变了样品中的缺陷状态所致,是al 、 si 、 o共同而复杂的作用结果。 - The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
栅泄漏电流的减小可归于氧空位缺陷的减小,即高的溅射氧气氛和氧气氛退火有助于减小hfo _ 2栅介质中的氧空位缺陷; 4 )研究了反应溅射制备的hfo _ 2栅介质漏电流机制及其silc效应。 - The as - grown crystals were characterization by cutting and directional , x - ray diffraction , high resolution ohmmeter , ir transmission spectroscopy , visible light absorption spectroscopy , scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ) . the ir transmittance of czt single crystals grown with cd - riched is about 53 % , while 23 % with no cd riched
采用解理实验、 x射线衍射、电学性能测试、红外透过谱测试、可见光吸收谱测试、 sem蚀坑分析、探测器的试制等分析测试方法,并首次采用正电子湮没寿命谱分析方法来研究czt单晶体的空位缺陷,综合表征了所生长的晶体的质量和性能。 - After annealing at 600 , because of formation of multi - vacancy - type defects that have long positron lifetime , positron annihilation average lifetime increased . when the average positron lifetime increased to maximum value ( 360ps ) , the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ) . this result suggested that oxygen was involved in the formation of multi - vacancy - type defects
正电子湮没技术测试证明,快中子辐照直拉硅中在大约600退火时产生的多空位缺陷具有较长正电子寿命,可以使正电子平均寿命增加,当样品的正电子平均寿命达到最大时( 360ps ) ,其间隙氧含量降到一个极小值( 4 10 ~ ( 17 ) atoms / cm ~ 3 ) ,这说明氧参与了这些缺陷的形成。
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