p-type中文是什么意思

• 通常用作
• 型半导体

• p     be p and q 上等。 mind [b ...
• type    n. 1.型，类型，(工业产品的)品种；风格，型式。 2 ...
• p-type semiconductor p    型半导体
• p type conduction    p 型导电性
• p type conductivity    p型半导体电导率
• p type constant    p型常数
• p type crystal rectifier    p型晶体整流器
• p type diffusion    p 型扩散
• p type dopant    p 型掺杂剂
• p type doping    p 型掺杂
• p type semiconductor    p 型半导体; p型半导体
• p-type conduction    p型导管; 正电导性
• p-type conductionp    型电导
• p-type conductivity    p型半导体电导率; p型传导性
• p-type conductor    p型导体
• p-type crystal rectifier    p型晶体整流器
• p-type diffusion    p型扩散
• p-type gallium arensidep    型砷化镓
• p-type semiconductor    p型半导体; 空穴导电型半导体; 空穴型半导体
• p-type semiconductorp    型半导体
• p-type semiconuctor    p型半导体
• p-type silicon    p型矽
• p-type transistor    p型晶体管
• type antifreeze p    型防冻剂
• type co tant p    型常数

• The sheet resistivity dramatically decreases to 106 ? / ? . the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too . te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
  ，面载流子浓度增大到109 / cm2的数量级，迁移率亦增大到104cm2 / v . s ，掺杂te元素改善了cdte薄膜的电学性质，使其变为良好的p型半导体。
• 1 successively depositing cbn thin films on si substrates which reaches international advanced level , the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity , and the working gas was the mixture of nitrogen and argon
  研究了衬底负偏压和射频功率对制备立方氮化硼薄膜的影响立方氮化硼薄膜沉积在p型si （ 100 ） （ 8 15 cm ）衬底上，靶材为h - bn靶（纯度达99 . 99 ） ，溅射气体为氩气和氮气混合而成，制样过程中，衬底加直流负偏压。
• Due to high - thermal stability and independent of impurities dj - center is argued to originate from antisite or antisite complex . furthermore , the ltpl measurements have been taken on as - irradiated and postannealed p - type 6h - sjc , l ; lines related to dj - center were not observed with sample after postannealing at 1500 ? , the observation of a series of high intensity spectra which may mask the d1 - center due to the recombination of the d - a pairs
  本文还对经幅照的p -型6h - sic的幅照退火特性进行了研究，在经过1500后退火的样品中没有观察到d _ i - center ，这可能是由于d _ i - center被实验中观察到的源于d - a对辐射复合的高强度的谱峰所掩盖。
• In this part , the issues and mechanism of light degradation of b - doped p - type cz - si solar cells are introduced firstly , it was clarified that boron and interstitial oxygen are major components of defect center for light degradation of b - doped cz - si solar cells . then in the experiment the b - doped cz - si is chosen as the substrates and annealled at different temperature
  文中首先介绍了掺硼单晶硅太阳电池的光照衰减问题及衰减机制，然后以p型掺硼单晶硅为实验样品，经过不同温度的热处理，对影响光衰减的主要因素硼、氧进行了研究。
• The main contents of the thesis are as following : ( 1 ) thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n - type . the method of p - type doping zno by proton transmutation doping was presented by reference to that of the silicon
  本论文的主要内容和结果如下: ( 1 )借用“热中子辐照硅片使部分硅嬗变为磷,从而将硅掺杂成n型”的思想,从质子嬗变角度讨论了实现zno材料的p型掺杂方案。
• With superior properties such as high thermal conductivity , high hole mobility , excellent chemical , thermal and radioactive stability , p - type diamond electrode can also greatly improve the stability of the devices , which complement the current electrode . the effect of boron concentration on the electronic properties of diamond films was investigated by raman spectroscopy , x - ray photoelectron spectroscopy and
  结果表明，掺杂金刚石膜突出的光学及电学性质及优异的抗高温、抗腐蚀能力，机械强度大等优点，使其在作lppp发光器件的电极时，能克服一般电极在空气中易于氧化、稳定性差的缺点，大大改善器件稳定性，提高器件寿命。
• In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators . firstly , we presented reseached and development of solar cells in china and foreign countries ; secondly , on the basis of fundamental priciples and theories , we discussed some factors of influcing conversion efficiency of solar cells , and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed , the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied , and some questions on epitaxy growth ( such as crystal qualities , interface stress , element interdiffusion , n - and p - type doping et all ) were solved ; after that , the cell fabrication process was described ; finally , we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma , designed and fixed new solar concentrators
  本文致力于用自制的低压mocvd装置进行cainp _ 2 / gaas / ge空间用高效级联太阳能电池制作的工艺以及聚光太阳能电池组件的研究。首先，介绍了国内外太阳能电池的研究现状及应用情况；其次，运用太阳能电池基本原理讨论影响电池转换效率的因素，分析了级联电池的伏安特性；随后，讨论了cainp _ 2 / gaas / ge双结级联电池的结构设计理念，研究了采用低压mocvd技术生长cainp _ 2 / gaas / ge级联太阳电池材料的工艺过程，解决了异质材料生长的结晶质量、界面应力、材料互扩散以及材料n 、 p型掺杂等一系列问题；然后总结了级联电池的后工艺制作；最后，研究了以pmma为材料的菲涅耳线聚焦透镜的热压成型工艺及其模具的加工工艺，设计并安装完成新型聚光太阳能电池组件。
• Then we grew the material with different active layer growth temperature , different v / ratio , different doping concentration and form . after that , we tested these materials by photoluminescence ( pl ) technology , and got the best growth condition according to the results of photoluminescence spectra . our result was that the active layer growth temperature was 700 , v / ratio was 60 , waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm , p - type doping with dmzn from 90sccm to 490sccm )
  然后在不同的有源区生长温度、 /比、掺杂方式及浓度情况下对激光器材料进行外延生长，并利用光荧光( pl )技术对不同生长条件下外延材料的光致发光特性进行了测试对比，结果表明在下列条件下生长出来的材料具有更好的光学和电学性能：有源区生长温度在700 、波导层/比选择为60 、 n型波导渐变掺杂190sccm - 590sccm的sih _ 4 、 p型波导渐变掺杂90sccm - 490sccm的dmzn 。

• p-typeとは意味：{形} : 《半導体》p 型の