电子气的英文
electron fluid
electron gas
例句与用法
更多例句： 上一页 - Under high drain voltage condition , the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse
在大漏极电压条件下,沟道电子易于注入到gan缓冲层中,并被缓冲层中的陷阱所俘获,耗尽二维电子气,从而导致电流崩塌效应。 - Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model
基于ganhemt器件物理和实验分析测试结果,发现电子迁移率与二维电子气浓度有关,并提出了一种gan电流崩塌效应的新物理模型。 - This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs
该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。 - By the use of iteration method to solve schrodinger - poisson equations when algan barrier layer doped about 1 1018cm - 3 , the max sheet density of 2deg is 1 1012cm - 2 and the thickness of 2deg is increasing from 15nm to 40nm with barrier ’ s thickness increasing
采用迭代法求解schrodinger - poisson方程,当algan势垒层掺杂浓度为1 1018cm - 3时,二维电子气浓度最高可达1 1012cm - 2 ,并且二维电子气薄层厚度随着势垒层厚度的增加从15nm增加到40nm 。 - However , in our nation , the research on gan - based microelectronic devices is in the early stage , and a great deal of vestigation is still needed to perform on separative processes of gan devices . due to the lack of algan / gan heterojunction materials in the country , a few researches on algan / gan were made , and the investigation on schottky rectifiers is much less
在国内， gan基微电子器件的研究刚开始起步，制备gan分立器件的工艺尚处于探索研究阶段，特别是受algan gan二维电子气材料来源的限制，国内algan gan基的场效应晶体管的研究开展得较少，关于肖特基整流二极管的研究更少。
