电子气的英文

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"电子气"怎么读用"电子气"造句

英文翻译手机版

electron fluid
electron gas

"电子"英文翻译 electron
"气"英文翻译 gas
"电子气泵" 英文翻译 : eaelectronic air pump; electronic air pump
"电子气笛" 英文翻译 : electronic typhonic equipment
"电子气动" 英文翻译 : pneumatosphere
"电子气动的" 英文翻译 : pneutronic
"电子气体" 英文翻译 : electron gas
"费密电子气" 英文翻译 : fermi gas
"简并电子气" 英文翻译 : degenerate electron gas; degenerateelectrongas
"退化电子气" 英文翻译 : degenerate electron gas
"自由电子气" 英文翻译 : free electron gas; gas of free electrons
"电子气候控制" 英文翻译 : ecc electronic climate control
"子气" 英文翻译 : an offspring steals oits maternal principle; child element; pi of pregnancy; the offspring principle
"超子气" 英文翻译 : hyperon gas
"孩子气" 英文翻译 : childishness 别再孩子气啦。 don't be childish any more
"芥子气" 英文翻译 : [化学] mustard gas; yperite; dichlorodiethyl sulfide◇芥子气中毒 mustard gas poisoning
"芥子气t" 英文翻译 : bis-ether
"男子气" 英文翻译 : manly; masculine; masculinity; virility
"女子气" 英文翻译 : femininity
"槽子气泡" 英文翻译 : debiteuse bubble; debiteuse seed
"超子气泡室" 英文翻译 : hyperon bubble chamber
"单原子气体" 英文翻译 : monatomic gas; monoatomic gas
"氮芥子气" 英文翻译 : nitrogen mustard gas
"等离子气" 英文翻译 : orifice gas; plasma gas
"等离子气体" 英文翻译 : plasma gas

例句与用法

Progress in two - dimensional electron gas in group - - nitride heterostructures
族氮化物异质结构二维电子气研究进展
Influence of al composition on transport properties of two - dimensional electron gas in alx ga1 - x n gan heterostructures
异质结构中二维电子气输运性质的影响
Influence of polarizations and doping in algan barrier on the two - dimensional electron - gas in algan gan heterostruture
异质结构中极化与势垒层掺杂对二维电子气的影响
In this dissertation , we study the quantized conductance phenomena on the experimental side and obtain the physical parameters of the 2deg in our samples
在这论文中，我们在实验方面研究了电导量子化的现象，并且得到我们样品之二维电子气的基本特性。
Recently , the interaction between saw and the 2deg in the gaas / alxga1 - xas heterojunction has attracted more and more scientists " attentions
近年来,表面声波( saw )通过压电效应与gaas / alxga1 - xas异质结中二维电子气( 2deg )的相互作用受到越来越多的关注。
Under high drain voltage condition , the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse
在大漏极电压条件下,沟道电子易于注入到gan缓冲层中,并被缓冲层中的陷阱所俘获,耗尽二维电子气,从而导致电流崩塌效应。
Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model
基于ganhemt器件物理和实验分析测试结果,发现电子迁移率与二维电子气浓度有关,并提出了一种gan电流崩塌效应的新物理模型。
This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs
该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。
By the use of iteration method to solve schrodinger - poisson equations when algan barrier layer doped about 1 1018cm - 3 , the max sheet density of 2deg is 1 1012cm - 2 and the thickness of 2deg is increasing from 15nm to 40nm with barrier ’ s thickness increasing
采用迭代法求解schrodinger - poisson方程,当algan势垒层掺杂浓度为1 1018cm - 3时,二维电子气浓度最高可达1 1012cm - 2 ,并且二维电子气薄层厚度随着势垒层厚度的增加从15nm增加到40nm 。
However , in our nation , the research on gan - based microelectronic devices is in the early stage , and a great deal of vestigation is still needed to perform on separative processes of gan devices . due to the lack of algan / gan heterojunction materials in the country , a few researches on algan / gan were made , and the investigation on schottky rectifiers is much less
在国内， gan基微电子器件的研究刚开始起步，制备gan分立器件的工艺尚处于探索研究阶段，特别是受algan gan二维电子气材料来源的限制，国内algan gan基的场效应晶体管的研究开展得较少，关于肖特基整流二极管的研究更少。