空位缺陷的英文
vacancy defect
例句与用法
- It is found that the pl spectra of al - si - sio2 films are composed of 3 bands located at about 370nm , 410nm , and 510nm , respectively . the peak position changes little with the different amount of al , while the intensity of the pl peak changes
Ple结果表明， 37onm和410nm的pl ，峰与样品中的氧空位缺陷有关，而510nm的pl峰则是由于铝的掺入改变了样品中的缺陷状态所致，是al 、 si 、 o共同而复杂的作用结果。 - The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
栅泄漏电流的减小可归于氧空位缺陷的减小，即高的溅射氧气氛和氧气氛退火有助于减小hfo _ 2栅介质中的氧空位缺陷； 4 )研究了反应溅射制备的hfo _ 2栅介质漏电流机制及其silc效应。 - The as - grown crystals were characterization by cutting and directional , x - ray diffraction , high resolution ohmmeter , ir transmission spectroscopy , visible light absorption spectroscopy , scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ) . the ir transmittance of czt single crystals grown with cd - riched is about 53 % , while 23 % with no cd riched
采用解理实验、 x射线衍射、电学性能测试、红外透过谱测试、可见光吸收谱测试、 sem蚀坑分析、探测器的试制等分析测试方法，并首次采用正电子湮没寿命谱分析方法来研究czt单晶体的空位缺陷，综合表征了所生长的晶体的质量和性能。 - After annealing at 600 , because of formation of multi - vacancy - type defects that have long positron lifetime , positron annihilation average lifetime increased . when the average positron lifetime increased to maximum value ( 360ps ) , the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ) . this result suggested that oxygen was involved in the formation of multi - vacancy - type defects
正电子湮没技术测试证明，快中子辐照直拉硅中在大约600退火时产生的多空位缺陷具有较长正电子寿命，可以使正电子平均寿命增加，当样品的正电子平均寿命达到最大时( 360ps ) ，其间隙氧含量降到一个极小值( 4 10 ~ ( 17 ) atoms / cm ~ 3 ) ，这说明氧参与了这些缺陷的形成。
