Blank detail specification for bipolar transistors for switching applications 开关用双极型晶体管空白详细规范
The study on the choice and improvement of pole structure of switched reluctance motors 开关磁阻电机极型选择及其改进研究
Climax pattern hypothesis 顶极型假设
Absolutely extreme form 绝对极型
Semiconductor discrete devices and integrated circuits . part 7 : bipolar transistors 半导体分立器件和集成电路第7部分:双极型晶体管
Blank detail specification for case - rated bipolar transistors for low - frequency amplification 低频放大管壳额定的双极型晶体管空白详细规范
The analysis of potential along the channel of the unipolar organic static induction transistor 单极型有机静电感应三极管沟道纵向电势分析
Relationships between ssta of tropical indian ocean and summer rainfall in southern china 中国南方夏季降水与热带印度洋偶极型海温异常的联系
Semiconductor discrete devices . detail specification for type 3da601 c silicon bipolar power transistor 半导体分立器件. 3da601型c波段硅双极型功率晶体管详细规范
Ideally quartz oscillators should use discrete bipolar and fet devices in the circuits recommended by the crystal manufacturers 要改善抖动性能，可以按照晶体厂商的建议，选择分立的双极型或fet型器件。
