Semiconductor devices - discrete devices . part 7 : bipolar transistors . section one - blank detail specification for ambient - rated bipolar transistors for low and high frequency amplification 半导体器件分立器件第7部分:双极型晶体管第一篇高低频放大环境额定的双极型晶体管空白详细规范
Semiconductor devices - integrated circuits - part 2 : digital integrated circuits - section one - blank detail specification for bipolar monolithic digital integrated circuit gates excluding uncommitted logic arrays 半导体器件集成电路第2部分:数字集成电路第一篇双极型单片数字集成电路门电路
A modern power electron power component igbt ( insulate - gate bipolar transistor ) is used as the main power switch component of power converter . it takes 80c196mc single - chip as core processor 电源变换器的功率开关器件采用现代电力电子功率器件igbt ( insulategatebipolartransistor ,绝缘栅双极型晶体管) ,控制系统以80c196mc单片机作为控制核心。
The cmos technology is better than bipolar technology , which help the circuit get lower power , so it is adopted . the hspice is used for dac circuit simulation with tsmc 0 . 18 m bsim3 ( v3 . 1 ) cmos model 从集成度、功耗、成品率等方面考虑, cmos工艺明显优于双极型工艺,故本设计采用cmos工艺,并用tsmc0 . 18 mbsim3 ( v3 . 1 ) cmos工艺模型在hspice软件上完成电路模拟仿真。
Introduced the advantages and disadvantages of the bipolar transistor , mos - fet transistor , ldmos - fet transistor , and the parameters of mos - fet transistor , ldmos - fet transistor in the uhf , which presents the advanced technology over the world 介绍了双极型晶体管、 mos ? fet晶体管、 ldmos ? fet晶体管的优缺点，介绍了最新开发的，代表目前国际先进水平的，工作在uhf波段的部分mos ? fet晶体管、 ldmos ? fet晶体管的技术参数。
Despite of many standard process flows and design methods . performances of ic devices in use are always different . especially bipolar ic devices which voltage and power hard to match the standard design methods , are always designed separately 虽然现在有许多标准设计流程和标准方法，但在实际应用中的电路产品的性能是有很大区别的，尤其是一些双极型集成电路，其功率、电压等参数都较难与现有的标准工艺和设计流程相匹配，以至于需要单独设计。
With powerful technology and advanced devices , adopted the special process , the products of sisemi have excellent high - temperature characteristic and reliability . sisemi has become a famous supplier of silicon power transistors for green illumination application in china 近年来，在吸收、消化引进技术的基础上，不断创新，深爱公司在4英寸生产线上采用三重扩散sipos钝化高压平面工艺稳定进行高压双极型器件规模化生产的工艺，荣获深圳市科技进步奖。
The dominance and properties of the cmos integrated reference were also described , and the research meaning was pointed out . related device theory and process model used in design were described . the temperature related model and the influencing factor of two active devices , subthreshold mosfet and pnp substrate transistor , based on cmos process were analyzed and compared , and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference 阐述了设计中相关的器件理论与工艺模型,对cmos工艺下的两种有源器件,即亚阈值工作状态下的金属场效应晶体管( mosfet )及衬底pnp双极型晶体管( bjt )的温度模型及其影响因素进行了分析和比较,指明衬底pnp双极型晶体管更适合作为基准源的温度补偿元件。
According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively . ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current . when modulated signals of spwm are changed , the on - off time of switches also changes , so as to the voltage and frequency of output signals 本文提出了一种基于dsp (数字信号处理器tms320f240 )的通用的三相间接变频电源系统，利用分段同步调制法和混合查表法，实时计算不同频率下的采样周期、电压幅值、输出脉宽，产生双极性spwm波形，经驱动放大后用于ipm ( intelligentpowermodule )中的绝缘栅双极型晶体管栅级驱动，以控制电源的输出电压和频率，实现变频电源的智能数字控制。
Third , the circuit configuration and design principle of hall 1c fabricated in si bipolar process were considered . through analyzing and simulation , we understand the basic design technology of integrated hall switches . as a result , we designed the layout of a si bipolar integrated hall switch 论文对si双极型霍尔开关集成电路的工作原理其中包括稳压电路、放大电路和触发电路等进行了认真的分析和仿真，重点研究了温度补偿、电阻修调等关键技术，并完成了高精度si双极型霍尔开关集成电路的版图设计。
