( 3 ) the analysis results of xrd , sem indicated that the ni - pd coating formed a fcc structure . after annealing at 200 ? , a little amount of pdsi was precipitated in the coating . the surface image of ni - pd coating was utricle ( 3 )利用xrd 、 sem 、 aes等手段对ni - pd合金镀层的结构、表面形貌、成分进行了分析，结果表明ni - pd合金镀层形成了面心立方的固溶体结构，镀层经过200快速退火后，有少量pd的硅化物( pdsi )析出。
The annealing also changes the grain morphology . the p grains from the amorphous layer are finer than in the other cases . silicide grains grow towards the substrate at high annealing temperature and finally shrink into isolated islands , thus deteriorating the silicide / si interface smoothness 由于非晶的形成，使得退火后晶粒要经重新形核和长大的过程，所以在同样的退火条件下，与未形成非晶的样品比，硅化物颗粒要小。
The buried layers moves towards sample surface , forming surface layers . the implantation - damaged zone also moves towards the surface and is recovered gradually . the fe - implanted films were implanted , or doped , with small amount of carbon for improving the film quality 另外随退火温度变化的还有注入损伤层，随退火温度的升高注入损伤逐渐恢复，损伤层厚度逐渐减小，到850的时候硅化物层断裂，损伤层则上升到样品表面。
Tem analysis demonstrates that the film quality is indeed improved as manifested by smoother ? - fesi2 / si interface , more homogeneous film thickness , finer grains , and higher thermal stability . further analysis by photon absorption measurements reveals that the bandgap value egd is not significantly altered . therefore , carbon dosage is favorable for obtaining high - quality ? - fesi2 films 经透射电镜分析可知引入碳离子后硅化物层的微结构向有利于薄膜质量的方向的发展，晶粒得到细化， - fesi _ 2层稳定性提高，因此从微结构角度考虑，引入c离子对于提高- fesi _ 2薄膜的质量是很有益处的。
It is the first time to study the mechanism of interfacial reaction in sic / ti composites by quantum chemistry computation methods . a suitable method to calculate titanium carbide and silicide was found and the thermodynamic and dynamic data involved in interfacial reaction of sic / ti composites have been obtained 首次将量子化学计算理论运用于金属基复合材料界面反应的研究中，运用gaussian98量子化学计算程序，找到了适合于研究过渡族金属ti的碳化物和硅化物的计算方法，获得了sic ti基复合材料界面反应的热力学和动力学数据。
