Especially according to later developing demand of integrated circuits , which require low - voltage low - power at work , the low - power optimization designs of bjmosfet are analyzed and discussed in detail from the factors that inf luence the threshold voltage , the materials that are used to fabricate it and the substrate materials . hence , we can receive some theoretical backgrounds of manufactureing this device 从结构、工艺、功耗等方面提出了器件的设计方法，特别是针对目前集成电路低压、低功耗发展的要求，从器件本身的阈值电压、制备器件的材料和器件的衬底方面进行了详细的分析，得出了一些结论，为器件的实际生产提供了理论指导。
Physics device model , component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism . the detail contents are as follows . the analytical threshold voltage model , drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet 本论文围绕这一微电子领域发展的前沿课题,在深入分析应变硅和soi物理机理的基础上,对器件的物理模型、器件结构设计和工艺实验等问题作了研究,主要包括以下几部分:首先,从器件的物理机制出发,建立主要针对薄膜全耗尽型器件的阈值电压、输出电流和跨导模型。
The author ' s main contributions are outlined as following : first , the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method . the changes of threshold voltage have been discussed under different stress conditions 主要研究结果如下：首先，利用衬底热空穴( shh )注入技术分别控制注入到超薄栅氧化层中的热电子和空穴的数量，定量研究了热电子和空穴注入对超薄栅氧化层击穿的影响，讨论了不同应力条件下的阈值电压变化。
An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations . experimental data in the literature shows that the model predictions are in good agreement . it is simple in functional form and hence computationally efficient . it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad . in accordance with common believe , radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices . however , if the radiation sensitivity is defined in the way we did it , the results indicated nmos rather than pmos devices are more sensitive , especially at low doses . this is important from the standpoint of their possible application in dosimetry 该模型物理意义明确，参数提取方便，适合于低辐照总剂量条件下的mos器件与电路的模拟。并进一步讨论了mosfet的辐照敏感性。结果表明，尽管pmos较之nmos因辐照引起的阈值电压漂移的绝对量更大，但从mosfet阈值电压漂移量的摆幅这一角度来看，在低剂量辐照条件下nmos较之pmos显得对辐照更为敏感。
Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors , bulk - acoustic - wave devices , surface - acoustic - wave devices , varistors , light emitting , light detecting devices and so on . undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films Zno是一种新型的直接带隙宽禁带半导体材料,具有六方纤锌矿结构,较高的激子束缚能( 60mev ) ,较低的电子诱生缺陷和阈值电压低等优点,在uv探测器、蓝紫光led和ld等光电子器件领域有巨大的应用潜景。
A model of the interface state density distribution near by valence band is presented , and the dependence of the threshold voltage on temperature , the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics , transfer characteristics and effective mobility of sic pmosfets are analyzed . thirdly , the output characteristics and the drain breakdown characteristics are modeled with the procedure medici . the output characteristics in the room temperature and 300 ? are simulated , and the effects of gate voltage . contact resistance , interface state and other factors on sic pmos drain breakdown characteristics are analyzed 提出了一个价带附近的界面态分布模型，用该模型较好地描述了sicpmos器件阈值电压随温度的变化关系、 c - v特性曲线以及亚阈特性曲线；分析了源漏寄生电阻对sicpmos器件输出特性、转移特性以及有效迁移率的影响；论文中用模拟软件medici模拟了sicpmos器件的输出特性和漏击穿特性，分别模拟了室温下和300时sicpmos器件的输出特性，分析了栅电压、接触电阻、界面态以及其他因素对sicpmos击穿特性的影响。
We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive , hysteresis , influence of sidegating effect on mesfet threshold voltage , influence of drain - source voltage on sidegating threshold voltage , influence of exchanging drain and source electrode on sidegating threshold voltage , relation between sidegating threshold voltage and the distance between side - gate and mesfet , relation between sidegating effect and floating gate , and so on 本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、 mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。
