algan造句

• Two - dimensional static numerical modeling and simulation of algan gan hemt
  二维静态模型与模拟
• Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy
  生长的跨导为186
• Optimized layers design for algan gan ingan symmetrical separate confinement heterojunction multi - quantum well laser diode
  对称分别限制多量子阱激光器的优化设计
• Influence of polarizations and doping in algan barrier on the two - dimensional electron - gas in algan gan heterostruture
  异质结构中极化与势垒层掺杂对二维电子气的影响
• The main result is ( 9 ) let n be a nest on a hilbert space h , and u be a weakly closed algan - module
  ) u ，使得，并且作为该结果的应用，得到了任一算子到u的距离公式。
• 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively
  2 、利用ti al双层电极作欧姆接触， au电极作肖特基接触，制造出algan基肖特基二极管原型器件。
• Algan / gan hemt has high breakdown electric field , fast electron drift velocity and large electron concentration , so it has been used more and more in high frequency and large power fields
  Algan / ganhemt由于具有击穿电压高、电子漂移速度快和电子浓度大等特点,已被越来越多地应用于高频及大功率领域。
• In this thesis , the basic characteristics of algan / gan heterojuntion have been analyzed . then fabrication of algan / gan hemt and current collapse are investigated . ti / al / ni / au ohmic contact to low doping gan film is studied
  本文以所制得hemt样品为研究对象,在分析其异质结特性的基础上,对电流崩塌效应机理作了探索性研究。
• The contact resistance reduces to the minimum level of 6 . 6 10 - 6 . cm2 after annealing for 1min at 900 ; the deposition of ni / au on algan is demonstrated for a good schottky contact performance , the leakage current is at a low level of 10 - 8a
  首先,极化效应是iii - n化合物异于其他iii - v化合物的最大特征,因此对algan / gan异质结极化效应进行了分析。
• For the first time , we reported the barrier height of au / algan is 1 . 08ev by analysis on various i - v curves under corresponding temperatures . 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation
  3 、采用金属镓层氮化技术，利用我们自行改造的热蒸发设备和氨气氮化设备，在无定形石英衬底上生长出具有择优取向的多晶gan ，取得了一些阶段性的成果。
• By the use of iteration method to solve schrodinger - poisson equations when algan barrier layer doped about 1 1018cm - 3 , the max sheet density of 2deg is 1 1012cm - 2 and the thickness of 2deg is increasing from 15nm to 40nm with barrier ’ s thickness increasing
  采用迭代法求解schrodinger - poisson方程,当algan势垒层掺杂浓度为1 1018cm - 3时,二维电子气浓度最高可达1 1012cm - 2 ,并且二维电子气薄层厚度随着势垒层厚度的增加从15nm增加到40nm 。
• In this paper , we first presented a comprehensive review of the research history and current status of gan material preparation and characterizations . on the basis of that , we conducted a detailed study of ohmic contact resistivity of metal - gan , and algan - based schottky barrier diode was successfully achieved . in addition , we reported polycrystalline gan epitaxied on silica glass substrates
  本论文在系统总结了国内外gan材料制备和器件应用的研究历史和现状的基础上，对金属与n型gan的欧姆接触进行了较细致的研究，计算出接触电阻率，并在此基础上制备了algan基肖特基二极管原型器件，向gan及其合金的微电子器件研究迈出了重要一步。
• However , in our nation , the research on gan - based microelectronic devices is in the early stage , and a great deal of vestigation is still needed to perform on separative processes of gan devices . due to the lack of algan / gan heterojunction materials in the country , a few researches on algan / gan were made , and the investigation on schottky rectifiers is much less
  在国内， gan基微电子器件的研究刚开始起步，制备gan分立器件的工艺尚处于探索研究阶段，特别是受algan gan二维电子气材料来源的限制，国内algan gan基的场效应晶体管的研究开展得较少，关于肖特基整流二极管的研究更少。