antisite造句

• Due to high - thermal stability and independent of impurities dj - center is argued to originate from antisite or antisite complex . furthermore , the ltpl measurements have been taken on as - irradiated and postannealed p - type 6h - sjc , l ; lines related to dj - center were not observed with sample after postannealing at 1500 ? , the observation of a series of high intensity spectra which may mask the d1 - center due to the recombination of the d - a pairs
  本文还对经幅照的p -型6h - sic的幅照退火特性进行了研究，在经过1500后退火的样品中没有观察到d _ i - center ，这可能是由于d _ i - center被实验中观察到的源于d - a对辐射复合的高强度的谱峰所掩盖。
• Substrate slices of uniform electrical properties are necessary for integrated circuit device fabrication . at present there are variations in electrical properties across substrate slices . these are associate with deep levels , in particular el2 , which is generally attributed to antisite defect complexes and considered to be related to grown - in dislocations formed by thermal stresses
  研究证明， si - gaas衬底电学特性的不均匀与材料中深能级微缺陷，特别是el _ 2 (深能级施主，被认为是as的反位缺陷的复合体)有极大的关系，而这些深能级微缺陷又与热应力形成的长入位错有密切联系。