epilayer造句

• Morphology of low temperature buffer layers and its influence on inp epilayer growth
  低温缓冲层的表面形貌及对其外延层生长的影响
• The results indicated that dmzn flow rate predominately controlled the growth rate of znse epilayer in this work
  研究发现实验中znse薄膜生长速率主要受dmzn流量控制。
• B ) sbd was made using the si epilayer as the active layer , qualified with a set of device technology
  B )在薄硅外延片的生长基础上，探索制作肖特基二极管的相关工艺，研制高频sbd原型器件。
• With optimized buffer layer growth parameters , gan epilayer with improved quality has been grown , whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
  以优化的缓冲层生长条件得到质量有明显改善的gan外延层， gan薄膜的( 0002 )面双晶dc - xrd扫描的半高宽为6arcmin 。
• By means of quantitative analysis , we accessed growth rate and film thickness of gan epilayer , and even determined in real time the thickness of buffer layer from in situ measurements of normal incidence reflectance
  通过对在位监测曲线的分析，确定gan生长速率以及外延层的厚度，并利用监测曲线实时标定缓冲层的厚度。
• Based on the requirement of the device , we grow the films of silicon of high quality . the thickness of the epilayer is from 0 . 4 u m tol p m , the doping concentration can be controlled conveniently
  然后，根据器件的要求，利用uhv cvd技术，生长出优质薄硅外延片，其厚度在0 . 4 m 1 m ，掺杂浓度可任意调节，晶体质量良好。
• In order to deal with large mismatch ( 14 . 6 % at room temperature ) between gaas and insb , a insb buffer layer was deposited firstly at low temperature 350 , followed by a insb epilayer being deposited at higher temperature 440
  为了克服insb与gaas间14 . 6 %的晶格失配度,实验设计先低温生长一定厚度的insb缓冲层,随后升温生长insb外延层。
• Firstly we analyze the requirement of sbd of high frequency for the doping concentration and thickness of the epilayer , for the structure parameter of the device . we design the optimum device parameter based on this . 2
  首先，从理论上分析出高频肖特基二极管对材料的外延层厚度掺杂浓度的要求，以及其它的器件结构参数要求，以此为依据，设计出最佳的器件参数。
• It also put forward that how to select appropriate epilayer doping concentration and thickness , pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps . a power dissipation model of 4h - sic mps was established
  通过对4h - sicmps击穿特性的二维模拟，提出如何选择合适的pn结深度、外延层掺杂浓度和厚度以及如何运用jte终端技术来提高击穿电压。
• No high - temperature pre - heat - treatment of the si substrate was used to obtain epilayers . the zns epilayer quality was improved with decreasing the substrate temperature . the small x - ray diffraction fwhm was obtained at 300 , which implied that the zns epilayers had higher quality
  随着生长温度的降低， zns单晶薄膜质量提高，由在300时得到较小x -射线衍射fwhm的结果表明获得了结晶质量较高的zns单晶薄膜。
• Based on this model , it was presented that how to select the thickness of epilayer , the doping concentration of epilayer , schottky contact , the width of pn grid , the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics
  基于此模型，提出在对正反向特性进行折衷时，如何选择合适的外延层掺杂浓度和厚度、肖特基接触和pn结网格宽度、 pn结深度和掺杂浓度。
• Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer , and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d , which was revealed by scanning electron microscope
  发现缓冲层的生长压力变化对退火后缓冲层表面的状态影响极大，增大缓冲层生长时的反应室压力可以明显提高外延gan的晶体质量和光学质量。通过sem分析，发现提高缓冲层生长压力时，高温gan生长明显经历了从三维生长到二维生长的过渡，晶体质量明显提高。
• In this thesis , we grow hexagonal gan on c - plane sapphire substrates in a horizontal mocvd reactor equipped with an in situ normal incidence reflectance monitoring , and the focus has been turned to improve the quality of unintentionally doped gan epilayer . listed below are the main contents of this thesis . ( 1 ) a single - wavelength normal incidence reflectance monitoring system was installed
  本文利用配有近垂直入射激光反射在位监测的卧式mocvd在c面蓝宝石衬底上生长六方相的gan薄膜，围绕提高本征gan外延层质量的目的，开展了具体如下的工作： ( 1 )在mocvd设备上搭建了一套单波长近垂直入射激光反射在位监测系统。
• The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially . besides , when the insb buffer layer thickness became 80nm , the roughness of insb epilayer increased . the initial stage of insb growth on gaas substrate is
  透射电子显微镜发现,在insb / gaas薄膜的界面处分布有间距为3 . 5nm的失配位错阵列,界面处的高密度位错可体现出类似深能级施主的特性,尤其在低温下对载流子散射更加显著。
• The intrinsic carrier concentration reduces when decreasing the v / iii ratio . the high quality of in0 . 53gao . 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs . when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0 . 2 um the mobility becomes the maximum and the carrier concentration is the lowest
  /比对外延层的表面形貌有较大影响，增大/比有利于提高材料的结晶质量；随着/比增加，迁移率升高；本征载流子浓度随着/比减少而降低； ash _ 3和ph _ 3转换时间在10秒到30秒之间可以获得质量较好的ingaas外延层；在inp缓冲层厚度为0 . 2 m时迁移率达到最大，载流子浓度达到最低。
• Different from fabricating sbd with bulk semiconductor , thin semiconductor films were utilized as the active layer in order to minimize the series resistance . si epilayer with sub - micro thickness was deposited by ultra high vauum chemical vapor deposition ( uhv - cvd ) . the sbd with rectifying performance was developed , using si epilayer as the active layer
  利用我们自行研制的超高真空化学气相沉积( uhv - cvd )技术外延了亚微米级的si薄膜，成功的制作了具有整流特性的高频薄硅肖特基二极管的原型器件。
• Furthermore , the growth and the study of self - organized quantum dots structures become more and more important recently , and the application of self - organization technique become wider and wider in this thesis , we address the theory of film growth and the growth technique firstly more , the ways and characteristics of surface detection are prescribed we mainly report the growth process , results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd , in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures , including the substrate cleaning , nitridation , the growth of buffer and the growth of gan and ain epilayer , is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover , we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature , we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )
  本论文主要论述了在espd - u装置上，采用电子回旋共振等离子体增强mocvd ( ecr - pamocvd )方法，在蓝宝石衬底上通过s - k模式自组装生长gan aln量子点结构的生长工艺、结果及讨论。而重点分析了自组装生长量子点之前的aln外延层生长工艺，包括衬底清洗、氮化、缓冲层的生长和gan 、 aln外延层的生长；通过高能电子衍射、 x射线衍射和原子力显微镜测试，并且对这些测试结果进行了详细的比较研究，得出了较优化的工艺条件，生长出了晶质较好、表面较平整的aln外延层；进而采用s - k模式自组装生长了gan aln量子点结构。由于实验装置加热炉温度的限制，我们没有能够生长出原子级平滑的aln外延层表面，因而没能够生长出密度比较大和直径比较小的量子点。