inas造句

• Influence of rashba spin-orbit interactionin inas gaas self-organization quantum dots
  自组织量子点中极化子性质
• Kinetic monte carlo simulation of inas quantum dots growth pause on gaas patterned substrate
  量子点生长停顿的动力学蒙特卡罗模拟
• Takeshima, masumi . " auger recombination in inas, gasb, inp, and gaas . " j . appl . phys . 43 ( 1972 ) : 4114-4119
  对于一些重要的二元化合物之欧杰再结合的有用资讯(材料参数与理论)。
• (3 ) . inas quantum dots covered with ingaas buffer and with alas buffer were measured by pl and trs spectra
  (3)分别测量了加ingaas缓冲层和加alas缓冲层inas量子点的光致发光谱和时间分辨谱。
• The swimming team ( sam ) won 4 gold, 4 silver and 6 bronze medals and set new records at the 4th inas-fid world swimming championships
  智障人士游泳代表队在第四届国际智障人士体育联盟世界游泳锦赛中取得四金四银六铜并破了多项记录
• The enclosed photographs show the souvenir cover to be issued on 7 january 2004 to commemorate the jockey club 3rd inas-fid world swimming championships
  图示为二四年一月七日推出的纪念封，主题为纪念赛马会第三届智障人士世界游泳锦标赛。
• In this paper photoluminescence ( pl ) spectra and time-resolved spectra were applied to study inas quantum dots . and we have got some significative results
  本论文较为深入地研究了量子点的光致发光谱(pl)和时间分辨谱(ts)，并取得了一些有意义的结果。
• The enclosed photograph shows the specimen impression of the special postmark to be issued on 7 january 2004 to commemorate the jockey club 3rd inas-fid world swimming championships
  图示为二四年一月七日推出的特别邮戳，主题为纪念赛马会第三届智障人士世界游泳锦标赛。
• Main works and results include : ( 1 ) . growth method of self-organized quantum dots was studied . high quality inas self-organized quantum dots were grown by mbe ( molecular beam epitaxy ) technique
  本文开展的主要工作和结果有：(1)研究了自组织量子点的生长方法，利用分子束外延技术(mbe)生长出高质量的inas自组织量子点。
• The team won the medals in the women s singles, women s doubles and women s team events . these results matched their achievements at the previous 3rd inas-fid world table tennis championships held in 2003 in mexico city, mexico
  女子乒乓球队继于二零零三年在墨西哥墨西哥城举行的第三届国际智障人士体育联盟世界乒乓球锦标赛，分别在女单、女双及女团项目再次取得金牌。
• (2 ) . inas quantum dots and wetting layer were studied and compared by using photoluminescence and time-resolved spectrum . luminescent mechanics model of inas quantum dots and wetting layer were presented, and it explained our results well
  (2)采用光致发光谱及时间分辨谱对inas量子点及浸润层的发光性质开展研究和对比，提出单层inas量子点和浸润层发光的机理模型，较好地解释了实验结果。
• (2 ) . inas quantum dots and wetting layer were studied and compared by using photoluminescence and time-resolved spectrum . luminescent mechanics model of inas quantum dots and wetting layer were presented, and it explained our results well
  (2)采用光致发光谱及时间分辨谱对inas量子点及浸润层的发光性质开展研究和对比，提出单层inas量子点和浸润层发光的机理模型，较好地解释了实验结果。
• The gaas / inas / gaas quantum-dots is dealed as strain sandwich structure, considering the large strain, using the kinematics theory of x-- ray dil1yaction of multi-layer of, experiment of x-ray diffraction from quantum-dot is simulated successfully to obtain the strain and thick of each layer
  将inasgaas多层量子点处理成夹层结构，考虑到大的应变，用多层膜的x射线衍射的运动学理论进行了成功的理论模拟，得出其应变参数及各层厚度。
• Moke and fmr studies were performed on epitaxial single crystalline fe ph . d thesis; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii-v semiconductor inas substrate with thickness of 8-25monolayer ( ml ) . the major findings are listed below : ( 1 ) the in-plane magnetic crystalline anisotropy of film with 8-25 ml thick are four-fold anisotropy, and the in-plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films . it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
  对于外延生长在inas衬底上、厚度为8-25ml的超薄fe单晶膜进行了铁磁共振和磁光研究，获得以下几点结果：(1)膜厚在8-25ml之间时，薄膜面内的磁晶各向异性为四度对称各向异性，垂直单轴各向异性比同厚度的fegaas系统小许多，而立方各向异性则比fegaas系统更接近bcc结构的fe。
• Moke and fmr studies were performed on epitaxial single crystalline fe ph . d thesis; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii-v semiconductor inas substrate with thickness of 8-25monolayer ( ml ) . the major findings are listed below : ( 1 ) the in-plane magnetic crystalline anisotropy of film with 8-25 ml thick are four-fold anisotropy, and the in-plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films . it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
  对于外延生长在inas衬底上、厚度为8-25ml的超薄fe单晶膜进行了铁磁共振和磁光研究，获得以下几点结果：(1)膜厚在8-25ml之间时，薄膜面内的磁晶各向异性为四度对称各向异性，垂直单轴各向异性比同厚度的fegaas系统小许多，而立方各向异性则比fegaas系统更接近bcc结构的fe。
• Moke and fmr studies were performed on epitaxial single crystalline fe ph . d thesis; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii-v semiconductor inas substrate with thickness of 8-25monolayer ( ml ) . the major findings are listed below : ( 1 ) the in-plane magnetic crystalline anisotropy of film with 8-25 ml thick are four-fold anisotropy, and the in-plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films . it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
  对于外延生长在inas衬底上、厚度为8-25ml的超薄fe单晶膜进行了铁磁共振和磁光研究，获得以下几点结果：(1)膜厚在8-25ml之间时，薄膜面内的磁晶各向异性为四度对称各向异性，垂直单轴各向异性比同厚度的fegaas系统小许多，而立方各向异性则比fegaas系统更接近bcc结构的fe。