ldmos造句

• A breakdown model of thin drift region ldmos with a step doping profile
  器件多晶硅栅量子效应的解析模型
• An analysis of voltage temperature parameter of high - voltage ldmos threshold value
  阈值电压的温度系数分析
• . auto - restart counter circuit made the circuits to be controlled perfectly
  主控门电路实现各子电路对功率ldmos的最终控制并驱动功率管。
• It is represented the optimization and implementation of step drift doping profiles soi ldmos
  Soi阶梯掺杂漂移区ldmos的优化设计与制备实验。
• Therefore , it is very important to study and model electrical characteristic of ldmos because of its practical application
  因此，对ldmos器件的电学特性研究与建模有着重要实际意义。
• Over - temperature shutdown circuit made the main circuits shut down in the condition that the temperature of chip was over 135
  热保护电路在芯片温度高于135时关断功率ldmos以保护芯片不被烧坏。
• A feasible way to produce soi material with located charge trenches was presented . the process programs of soi ldmos were finally given
  此外，设计具有局域电荷槽结构的soildmos器件的版图和工艺制备流程，并进行工艺制备。
• In a word , for the merged power ldmoss , vbr = 400v . for the low side ldmos , vbr = 425v , ron = 0 . 1 . cm2 , ton 30ns ， toff 140ns . r = 6 , for i = 0 . 35a , p 静态 = 0 . 74w
  把该功率器件集成在spic的内部，使spic的效率更高、性能更好、成本更低。
• With the development of semiconductor technology , ldmos is more and more widely used in power integrated circuits and smart power circuits
  随着半导体工艺技术的不断成熟， ldmos越来越广泛地应用于功率集成电路及智能功率集成电路中。
• Lateral high - voltage power device ldmos has advantages of high - voltage , large gain , wide dynamic range , low distortion and compatibility with low - voltage circuit process
  横向高压功率器件ldmos有耐高压、增益大、动态范围宽、失真低和易于和低压电路工艺兼容等特点。
• 4 ) . analysed the relationship of sensor ’ s voltage and ldmos ’ voltage , which will benefit from the intergration of high voltage device and low voltage circuit . 5 )
  4 )分析一种带sensor端ldmos的检测端电压与功率管电压的关系,以期更好的设计高低压集成的智能功率ic 。
• The two structure ldmos was compared by simulation with medici software . the result is that their breakdown voltage is almost the same and the thin epitaxial layer ldmos ? ron is lower
  通过medici模拟对两种器件进行比较，结果为两种器件耐压相当，薄外延ldmos导通电阻略低。
• So the research on spic is moving on steadily . second , the history of ldmos is presented , and several kinds of ldmos is displayed and discussed . then opt - vld , which was invented by pro
  第三章介绍spic的三种常见隔离技术和本次工作中的创新型隔离技术，并给出了模拟结果进行分析。
• The research of ldmos current characteristic involves the linear current region , cut - off saturation region , quasi - saturation region and providing the simplified analytical expressio n
  Ldmos电流特性的研究涉及了器件电流线性区、夹断饱和区和准饱和区，并给出了简化的电流特性解析表达式。
• The breakdown mechanism of soi ldmos with located charge trenches was analyzed in this thesis . the interface charge model for the breakdown voltage was proposed
  本课题分析具有局域电荷槽结构的soildmos的纵向耐压机理，提出界面电荷耐压模型，这是迄今为止所见报道的高压soi器件理想的新模型。
• A thin epitaxial layer ( 10gm ) ldmos device used n - burry layer structure was proposed in the paper during the high - voltage device design , which is helpful to improve the drive circu it ? technology
  在高压器件研究中，提出了一种外延层厚度为10 m采用n埋层结构薄外延高压ldmos器件，对进一步改进驱动电路的工艺有着积极的意义。
• Considering the shortcoming of thick epitaxial layer technology , author proposed a thin epitaxial layer ldmos used n - burry layer . through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage
  针对目前厚外延工艺的缺点，提出的薄外延ldmos采用n埋层，通过优化n埋层长度、注入剂量可提高器件耐压。
• Comparing with conventional resurf structure , the novel structure has only half the device length and 1 / 3 of the on - resistance as well as comparable breakdown voltage . we have also done some worked on the soi composite structure
  通过将tsoi结构的ldmos与常规resurf结构soi - ldmos的比较，在同等耐压下采用新型结构的器件长度缩短了1 / 2 ，比导通电阻降低了2 / 3 。
• In the model of on - resistance , we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region . then we provide the explicit dependence between on - resistance and doping distribution parameter
  导通电阻模型考虑了ldmos的沟道横向杂质分布和漂移区杂质纵向分布的结构特点，给出了导通电阻与杂质分布参数的明确函数关系。
• We studied the resurf , trench - gate , 3d - resurf ldmos . we designed the power switch ic based on epitaxial simox substrate , satisfying the requirements of the user . this ic can sustain 60 ~ 80v shutdown voltage overshot
  在此基础上，本文设计了性能满足用户要求的，基于esoi衬底结构的功率开关集成电路，该集成电路可承受60 ~ 80v的反向过冲电压，并具有过流，过压等保护电路。